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dc.creatorVasić, Dušan B.
dc.creatorLukić, Petar M.
dc.creatorLukić, Vladan M.
dc.creatorŠašić, Rajko
dc.date.accessioned2021-03-10T11:40:58Z
dc.date.available2021-03-10T11:40:58Z
dc.date.issued2012
dc.identifier.issn1454-4164
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/1980
dc.description.abstractIn this paper, one of the most promising electron devices - carbon nanotube field effect transistor (CNT FET) is investigated. At the beginning, the carbon nanotube properties are presented. The main contribution of this paper is the new analytical model of CNT FET - current voltage characteristics. Developed model describes behavior of CNT FET in very good manner and, at the same time, the model is relatively simple. Using the developed model, simulations were performed. The results obtained by using proposed model are in very good agreement with already known and published ones.en
dc.publisherNatl Inst Optoelectronics, Bucharest-Magurele
dc.rightsrestrictedAccess
dc.sourceJournal of Optoelectronics and Advanced Materials
dc.subjectCNT FETen
dc.subjectCurrent - voltage characteristicsen
dc.subjectAnalytical modelen
dc.titleAnalytical model of CNT FET current-voltage characteristicsen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage182
dc.citation.issue1-2
dc.citation.other14(1-2): 176-182
dc.citation.rankM23
dc.citation.spage176
dc.citation.volume14
dc.identifier.pmid
dc.identifier.rcubconv_6687
dc.identifier.scopus2-s2.0-84860431520
dc.identifier.wos000302579300028
dc.type.versionpublishedVersion


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