The aim of this paper is to examine the reliability of erasable programmable read only memory (EPROM) and electrically erasable programmable read only memory (EEPROM) components subjected to the influence of gamma radiation. This problem is of considerable significance for both military industry and space technology. We present total dose results for the NM27C512 8F85 EPROM and M24128 - B W BN 5 T P EEPROM components. There is evidence that EPROM components radioactive reliability is better than that of EEPROM components. Furthermore, the changes EPROM's undergoes are reversible, so that after erasing process and reprogramming all EPROM components are fully functional. On the other hand, EEPROM's changes are irreversible and when subjected to the influence of gamma radiation, all EEPROM components become permanently nonfunctional. The obtained results are analyzed and explained via the interaction of gamma radiation with oxide layers.
Keywords:
EPROM / EEPROM / reliability / gamma radiation
Source:
Radiation Effects and Defects in Solids, 2012, 167, 12, 903-912
TY - JOUR
AU - Loncar, Boris
AU - Kočinac, Saša
PY - 2012
UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2188
AB - The aim of this paper is to examine the reliability of erasable programmable read only memory (EPROM) and electrically erasable programmable read only memory (EEPROM) components subjected to the influence of gamma radiation. This problem is of considerable significance for both military industry and space technology. We present total dose results for the NM27C512 8F85 EPROM and M24128 - B W BN 5 T P EEPROM components. There is evidence that EPROM components radioactive reliability is better than that of EEPROM components. Furthermore, the changes EPROM's undergoes are reversible, so that after erasing process and reprogramming all EPROM components are fully functional. On the other hand, EEPROM's changes are irreversible and when subjected to the influence of gamma radiation, all EEPROM components become permanently nonfunctional. The obtained results are analyzed and explained via the interaction of gamma radiation with oxide layers.
PB - Taylor & Francis Ltd, Abingdon
T2 - Radiation Effects and Defects in Solids
T1 - Comparative analysis of influence of gamma radiation on programmable memory characteristics
EP - 912
IS - 12
SP - 903
VL - 167
DO - 10.1080/10420150.2012.727090
ER -
@article{
author = "Loncar, Boris and Kočinac, Saša",
year = "2012",
abstract = "The aim of this paper is to examine the reliability of erasable programmable read only memory (EPROM) and electrically erasable programmable read only memory (EEPROM) components subjected to the influence of gamma radiation. This problem is of considerable significance for both military industry and space technology. We present total dose results for the NM27C512 8F85 EPROM and M24128 - B W BN 5 T P EEPROM components. There is evidence that EPROM components radioactive reliability is better than that of EEPROM components. Furthermore, the changes EPROM's undergoes are reversible, so that after erasing process and reprogramming all EPROM components are fully functional. On the other hand, EEPROM's changes are irreversible and when subjected to the influence of gamma radiation, all EEPROM components become permanently nonfunctional. The obtained results are analyzed and explained via the interaction of gamma radiation with oxide layers.",
publisher = "Taylor & Francis Ltd, Abingdon",
journal = "Radiation Effects and Defects in Solids",
title = "Comparative analysis of influence of gamma radiation on programmable memory characteristics",
pages = "912-903",
number = "12",
volume = "167",
doi = "10.1080/10420150.2012.727090"
}
Loncar, B.,& Kočinac, S.. (2012). Comparative analysis of influence of gamma radiation on programmable memory characteristics. in Radiation Effects and Defects in Solids
Taylor & Francis Ltd, Abingdon., 167(12), 903-912.
https://doi.org/10.1080/10420150.2012.727090
Loncar B, Kočinac S. Comparative analysis of influence of gamma radiation on programmable memory characteristics. in Radiation Effects and Defects in Solids. 2012;167(12):903-912.
doi:10.1080/10420150.2012.727090 .
Loncar, Boris, Kočinac, Saša, "Comparative analysis of influence of gamma radiation on programmable memory characteristics" in Radiation Effects and Defects in Solids, 167, no. 12 (2012):903-912,
https://doi.org/10.1080/10420150.2012.727090 . .
