Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy
Само за регистроване кориснике
2013
article (publishedVersion)

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Silicon carbide (H-4-SiC as well as H-6-SiC) is known to be an anisotropic material. Among others, the transport parameters in the c-direction such as low field mobility and saturation velocity, are moderately different from those in the a- and b-directions in the case of H-4-SiC, while this difference becomes remarkable in the case of H-6-SiC. The aim of this study is to investigate the effect of this anisotropy on an analytical model for "drift region voltage drop" in a H-4-SiC vertical double implanted metal oxide semiconductor (VDIMOS) structure.
Извор:
Japanese Journal of Applied Physics, 2013, 52, 9Издавач:
- IOP Publishing Ltd, Bristol
Финансирање / пројекти:
- info:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45003/RS// (RS-45003)
DOI: 10.7567/JJAP.52.094302
ISSN: 0021-4922