Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy
Само за регистроване кориснике
2013
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
Silicon carbide (H-4-SiC as well as H-6-SiC) is known to be an anisotropic material. Among others, the transport parameters in the c-direction such as low field mobility and saturation velocity, are moderately different from those in the a- and b-directions in the case of H-4-SiC, while this difference becomes remarkable in the case of H-6-SiC. The aim of this study is to investigate the effect of this anisotropy on an analytical model for "drift region voltage drop" in a H-4-SiC vertical double implanted metal oxide semiconductor (VDIMOS) structure.
Извор:
Japanese Journal of Applied Physics, 2013, 52, 9Издавач:
- IOP Publishing Ltd, Bristol
Финансирање / пројекти:
DOI: 10.7567/JJAP.52.094302
ISSN: 0021-4922
WoS: 000323884300028
Scopus: 2-s2.0-84883889999
Институција/група
Tehnološko-metalurški fakultetTY - JOUR AU - Abood, Imhimmad AU - Šašić, Rajko AU - Ostojić, Stanko M. AU - Lukić, Petar M. PY - 2013 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2396 AB - Silicon carbide (H-4-SiC as well as H-6-SiC) is known to be an anisotropic material. Among others, the transport parameters in the c-direction such as low field mobility and saturation velocity, are moderately different from those in the a- and b-directions in the case of H-4-SiC, while this difference becomes remarkable in the case of H-6-SiC. The aim of this study is to investigate the effect of this anisotropy on an analytical model for "drift region voltage drop" in a H-4-SiC vertical double implanted metal oxide semiconductor (VDIMOS) structure. PB - IOP Publishing Ltd, Bristol T2 - Japanese Journal of Applied Physics T1 - Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy IS - 9 VL - 52 DO - 10.7567/JJAP.52.094302 ER -
@article{ author = "Abood, Imhimmad and Šašić, Rajko and Ostojić, Stanko M. and Lukić, Petar M.", year = "2013", abstract = "Silicon carbide (H-4-SiC as well as H-6-SiC) is known to be an anisotropic material. Among others, the transport parameters in the c-direction such as low field mobility and saturation velocity, are moderately different from those in the a- and b-directions in the case of H-4-SiC, while this difference becomes remarkable in the case of H-6-SiC. The aim of this study is to investigate the effect of this anisotropy on an analytical model for "drift region voltage drop" in a H-4-SiC vertical double implanted metal oxide semiconductor (VDIMOS) structure.", publisher = "IOP Publishing Ltd, Bristol", journal = "Japanese Journal of Applied Physics", title = "Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy", number = "9", volume = "52", doi = "10.7567/JJAP.52.094302" }
Abood, I., Šašić, R., Ostojić, S. M.,& Lukić, P. M.. (2013). Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy. in Japanese Journal of Applied Physics IOP Publishing Ltd, Bristol., 52(9). https://doi.org/10.7567/JJAP.52.094302
Abood I, Šašić R, Ostojić SM, Lukić PM. Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy. in Japanese Journal of Applied Physics. 2013;52(9). doi:10.7567/JJAP.52.094302 .
Abood, Imhimmad, Šašić, Rajko, Ostojić, Stanko M., Lukić, Petar M., "Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy" in Japanese Journal of Applied Physics, 52, no. 9 (2013), https://doi.org/10.7567/JJAP.52.094302 . .