4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance

Abstract

4H-SiC VDMOS is a peculiar semiconductor structure with two considerably different recognized regions. One of them is a vertical drift region, whereas the other one appears as a horizontal channel with its left and right sections corresponding to source bias. In each of these regions current-voltage characterisic can become saturated regardless of the status of the other region, thus making possible several operation modes of the considered devices. The investigation of the onset of these saturations in their order of appearance is the goal of this paper.