Flexible Transistors Exploiting P3HT on Paper Substrate and Graphene Oxide Film as Gate Dielectric: Proof of Concept
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Authors
Valentini, Luca
Cardinali, Marta
Grković, Mirjana
Uskoković, Petar

Alimenti, Federico

Roselli, Luca

Kenny, Jose M.

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In this paper we report: the use of graphene oxide in aqueous solution as a gate dielectric material, its application to a MOS transistor based on organic semiconductor and the use of paper as substrate material.
Keywords:
Graphene Oxide / Flexible Electronics / Electrical Properties / Surface WettabilitySource:
Science of Advanced Materials, 2013, 5, 5, 530-533Publisher:
- Amer Scientific Publishers, Valencia
DOI: 10.1166/sam.2013.1484
ISSN: 1947-2935