Flexible Transistors Exploiting P3HT on Paper Substrate and Graphene Oxide Film as Gate Dielectric: Proof of Concept

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Authors
Valentini, Luca
Cardinali, Marta
Grković, Mirjana
Uskoković, Petar
Alimenti, Federico
Roselli, Luca
Kenny, Jose M.
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Abstract
In this paper we report: the use of graphene oxide in aqueous solution as a gate dielectric material, its application to a MOS transistor based on organic semiconductor and the use of paper as substrate material.
Keywords:
Graphene Oxide / Flexible Electronics / Electrical Properties / Surface Wettability
Source:
Science of Advanced Materials, 2013, 5, 5, 530-533
Publisher:
  • Amer Scientific Publishers, Valencia

DOI: 10.1166/sam.2013.1484

ISSN: 1947-2935

WoS: 000322604700015

Scopus: 2-s2.0-84880955345
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URI
http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2421
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Tehnološko-metalurški fakultet