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Flexible Transistors Exploiting P3HT on Paper Substrate and Graphene Oxide Film as Gate Dielectric: Proof of Concept
dc.creator | Valentini, Luca | |
dc.creator | Cardinali, Marta | |
dc.creator | Grković, Mirjana | |
dc.creator | Uskoković, Petar | |
dc.creator | Alimenti, Federico | |
dc.creator | Roselli, Luca | |
dc.creator | Kenny, Jose M. | |
dc.date.accessioned | 2021-03-10T12:09:03Z | |
dc.date.available | 2021-03-10T12:09:03Z | |
dc.date.issued | 2013 | |
dc.identifier.issn | 1947-2935 | |
dc.identifier.uri | http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2421 | |
dc.description.abstract | In this paper we report: the use of graphene oxide in aqueous solution as a gate dielectric material, its application to a MOS transistor based on organic semiconductor and the use of paper as substrate material. | en |
dc.publisher | Amer Scientific Publishers, Valencia | |
dc.rights | restrictedAccess | |
dc.source | Science of Advanced Materials | |
dc.subject | Graphene Oxide | en |
dc.subject | Flexible Electronics | en |
dc.subject | Electrical Properties | en |
dc.subject | Surface Wettability | en |
dc.title | Flexible Transistors Exploiting P3HT on Paper Substrate and Graphene Oxide Film as Gate Dielectric: Proof of Concept | en |
dc.type | article | |
dc.rights.license | ARR | |
dc.citation.epage | 533 | |
dc.citation.issue | 5 | |
dc.citation.other | 5(5): 530-533 | |
dc.citation.rank | M21 | |
dc.citation.spage | 530 | |
dc.citation.volume | 5 | |
dc.identifier.doi | 10.1166/sam.2013.1484 | |
dc.identifier.scopus | 2-s2.0-84880955345 | |
dc.identifier.wos | 000322604700015 | |
dc.type.version | publishedVersion |
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