Based on the approximate solution of Poisson's equation in the case of a p-doped silicon body, an improved current-voltage characteristic model of long-channel cylindrical surrounding-gate Si nanowire MOSFET is proposed. The improvement itself considers a realistic description of the carriers' mobility degradation owing to the radial electric field and a more detailed and accurate analytical solution to the 1D Poisson's equation than the solutions available in the literature. The model is valid in the wide range of the doping concentration and shows a satisfactory level of agreement with the two-dimensional simulation results and the former models. It can also be applied to different operation regimes such as subthreshold, linear and saturation regimes.
TY - JOUR
AU - Ostojić, Stanko M.
AU - Šašić, Rajko
AU - Lukić, Petar M.
AU - Abood, Imhimmad
PY - 2014
UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2696
AB - Based on the approximate solution of Poisson's equation in the case of a p-doped silicon body, an improved current-voltage characteristic model of long-channel cylindrical surrounding-gate Si nanowire MOSFET is proposed. The improvement itself considers a realistic description of the carriers' mobility degradation owing to the radial electric field and a more detailed and accurate analytical solution to the 1D Poisson's equation than the solutions available in the literature. The model is valid in the wide range of the doping concentration and shows a satisfactory level of agreement with the two-dimensional simulation results and the former models. It can also be applied to different operation regimes such as subthreshold, linear and saturation regimes.
PB - IOP Publishing Ltd, Bristol
T2 - Physica Scripta
T1 - Surrounding gate long channel nanowire MOSFET modelling-extended analysis
IS - 11
VL - 89
DO - 10.1088/0031-8949/89/11/115802
ER -
@article{
author = "Ostojić, Stanko M. and Šašić, Rajko and Lukić, Petar M. and Abood, Imhimmad",
year = "2014",
abstract = "Based on the approximate solution of Poisson's equation in the case of a p-doped silicon body, an improved current-voltage characteristic model of long-channel cylindrical surrounding-gate Si nanowire MOSFET is proposed. The improvement itself considers a realistic description of the carriers' mobility degradation owing to the radial electric field and a more detailed and accurate analytical solution to the 1D Poisson's equation than the solutions available in the literature. The model is valid in the wide range of the doping concentration and shows a satisfactory level of agreement with the two-dimensional simulation results and the former models. It can also be applied to different operation regimes such as subthreshold, linear and saturation regimes.",
publisher = "IOP Publishing Ltd, Bristol",
journal = "Physica Scripta",
title = "Surrounding gate long channel nanowire MOSFET modelling-extended analysis",
number = "11",
volume = "89",
doi = "10.1088/0031-8949/89/11/115802"
}
Ostojić, S. M., Šašić, R., Lukić, P. M.,& Abood, I.. (2014). Surrounding gate long channel nanowire MOSFET modelling-extended analysis. in Physica Scripta
IOP Publishing Ltd, Bristol., 89(11).
https://doi.org/10.1088/0031-8949/89/11/115802
Ostojić SM, Šašić R, Lukić PM, Abood I. Surrounding gate long channel nanowire MOSFET modelling-extended analysis. in Physica Scripta. 2014;89(11).
doi:10.1088/0031-8949/89/11/115802 .
Ostojić, Stanko M., Šašić, Rajko, Lukić, Petar M., Abood, Imhimmad, "Surrounding gate long channel nanowire MOSFET modelling-extended analysis" in Physica Scripta, 89, no. 11 (2014),
https://doi.org/10.1088/0031-8949/89/11/115802 . .
