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Surrounding gate long channel nanowire MOSFET modelling-extended analysis

Authorized Users Only
2014
Authors
Ostojić, Stanko M.
Šašić, Rajko
Lukić, Petar M.
Abood, Imhimmad
conferenceObject (publishedVersion)
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Abstract
Based on the approximate solution of Poisson's equation in the case of a p-doped silicon body, an improved current-voltage characteristic model of long-channel cylindrical surrounding-gate Si nanowire MOSFET is proposed. The improvement itself considers a realistic description of the carriers' mobility degradation owing to the radial electric field and a more detailed and accurate analytical solution to the 1D Poisson's equation than the solutions available in the literature. The model is valid in the wide range of the doping concentration and shows a satisfactory level of agreement with the two-dimensional simulation results and the former models. It can also be applied to different operation regimes such as subthreshold, linear and saturation regimes.
Keywords:
nanowire / surrounding gate / mobility degradation / current-voltage characteristics
Source:
Physica Scripta, 2014, 89, 11
Publisher:
  • IOP Publishing Ltd, Bristol
Funding / projects:
  • info:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45003/RS// (RS-45003)

DOI: 10.1088/0031-8949/89/11/115802

ISSN: 0031-8949

WoS: 000346656500027

Scopus: 2-s2.0-84908539760
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URI
http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2696
Collections
  • Radovi istraživača / Researchers’ publications (TMF)
Institution/Community
Tehnološko-metalurški fakultet

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