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dc.creatorOstojić, Stanko M.
dc.creatorŠašić, Rajko
dc.creatorLukić, Petar M.
dc.creatorAbood, Imhimmad
dc.date.accessioned2021-03-10T12:26:21Z
dc.date.available2021-03-10T12:26:21Z
dc.date.issued2014
dc.identifier.issn0031-8949
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/2696
dc.description.abstractBased on the approximate solution of Poisson's equation in the case of a p-doped silicon body, an improved current-voltage characteristic model of long-channel cylindrical surrounding-gate Si nanowire MOSFET is proposed. The improvement itself considers a realistic description of the carriers' mobility degradation owing to the radial electric field and a more detailed and accurate analytical solution to the 1D Poisson's equation than the solutions available in the literature. The model is valid in the wide range of the doping concentration and shows a satisfactory level of agreement with the two-dimensional simulation results and the former models. It can also be applied to different operation regimes such as subthreshold, linear and saturation regimes.en
dc.publisherIOP Publishing Ltd, Bristol
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45003/RS//
dc.rightsrestrictedAccess
dc.sourcePhysica Scripta
dc.subjectnanowireen
dc.subjectsurrounding gateen
dc.subjectmobility degradationen
dc.subjectcurrent-voltage characteristicsen
dc.titleSurrounding gate long channel nanowire MOSFET modelling-extended analysisen
dc.typeconferenceObject
dc.rights.licenseARR
dc.citation.issue11
dc.citation.other89(11): -
dc.citation.rankM22
dc.citation.volume89
dc.identifier.doi10.1088/0031-8949/89/11/115802
dc.identifier.rcubconv_4607
dc.identifier.scopus2-s2.0-84908539760
dc.identifier.wos000346656500027
dc.type.versionpublishedVersion


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