An analytical 3-D model for small dimensions MOSFETs' threshold voltage
Само за регистроване кориснике
2000
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
This paper has presented an analytical three-dimensional (3D) model for threshold voltage of small dimensions MOSFETs with an experimental dependence of acceptor concentration in the channel. The corresponding algorithms have been developed and the simulation of surface potential and threshold voltage has been performed.
Извор:
2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 2000, 1, 217-220Издавач:
- 2000 22nd International Conference on Microelectronics, MIEL 2000
Институција/група
Tehnološko-metalurški fakultetTY - CONF AU - Pilja, D.Z. AU - Šašić, Rajko AU - Ramović, Rifat M. AU - Tjapkin, D.A. PY - 2000 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/276 AB - This paper has presented an analytical three-dimensional (3D) model for threshold voltage of small dimensions MOSFETs with an experimental dependence of acceptor concentration in the channel. The corresponding algorithms have been developed and the simulation of surface potential and threshold voltage has been performed. PB - 2000 22nd International Conference on Microelectronics, MIEL 2000 C3 - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings T1 - An analytical 3-D model for small dimensions MOSFETs' threshold voltage EP - 220 SP - 217 VL - 1 DO - 10.1109/ICMEL.2000.840559 ER -
@conference{ author = "Pilja, D.Z. and Šašić, Rajko and Ramović, Rifat M. and Tjapkin, D.A.", year = "2000", abstract = "This paper has presented an analytical three-dimensional (3D) model for threshold voltage of small dimensions MOSFETs with an experimental dependence of acceptor concentration in the channel. The corresponding algorithms have been developed and the simulation of surface potential and threshold voltage has been performed.", publisher = "2000 22nd International Conference on Microelectronics, MIEL 2000", journal = "2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings", title = "An analytical 3-D model for small dimensions MOSFETs' threshold voltage", pages = "220-217", volume = "1", doi = "10.1109/ICMEL.2000.840559" }
Pilja, D.Z., Šašić, R., Ramović, R. M.,& Tjapkin, D.A.. (2000). An analytical 3-D model for small dimensions MOSFETs' threshold voltage. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings 2000 22nd International Conference on Microelectronics, MIEL 2000., 1, 217-220. https://doi.org/10.1109/ICMEL.2000.840559
Pilja D, Šašić R, Ramović RM, Tjapkin D. An analytical 3-D model for small dimensions MOSFETs' threshold voltage. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:217-220. doi:10.1109/ICMEL.2000.840559 .
Pilja, D.Z., Šašić, Rajko, Ramović, Rifat M., Tjapkin, D.A., "An analytical 3-D model for small dimensions MOSFETs' threshold voltage" in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):217-220, https://doi.org/10.1109/ICMEL.2000.840559 . .