Приказ основних података о документу

dc.creatorPilja, D.Z.
dc.creatorŠašić, Rajko
dc.creatorRamović, Rifat M.
dc.creatorTjapkin, D.A.
dc.date.accessioned2021-03-10T09:50:28Z
dc.date.available2021-03-10T09:50:28Z
dc.date.issued2000
dc.identifier.isbn978-078035235-3
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/276
dc.description.abstractThis paper has presented an analytical three-dimensional (3D) model for threshold voltage of small dimensions MOSFETs with an experimental dependence of acceptor concentration in the channel. The corresponding algorithms have been developed and the simulation of surface potential and threshold voltage has been performed.en
dc.publisher2000 22nd International Conference on Microelectronics, MIEL 2000
dc.rightsrestrictedAccess
dc.source2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
dc.titleAn analytical 3-D model for small dimensions MOSFETs' threshold voltageen
dc.typeconferenceObject
dc.rights.licenseARR
dc.citation.epage220
dc.citation.other1: 217-220
dc.citation.spage217
dc.citation.volume1
dc.identifier.doi10.1109/ICMEL.2000.840559
dc.identifier.scopus2-s2.0-0033297878
dc.type.versionpublishedVersion


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Приказ основних података о документу