A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET
Abstract
A simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel models and should be considered as their naturally constructed extension. The accuracy of the developed model has been verified by comparison with available simulation results as well as with previous models calculations.
Keywords:
Surrounding Gate / Nanowire MOSFET / Short-Channel / 2D AnalysisSource:
Optoelectronics and Advanced Materials-Rapid Communications, 2016, 10, 1-2, 50-54Publisher:
- Natl Inst Optoelectronics, Bucharest-Magurele
Funding / projects:
- Optoelectronics nanodimension systems - the rout towards applications (RS-45003)
- Joint research of measurements and effects of ionizing and UV radiation in medicine and environmental protection (RS-43011)
Institution/Community
Tehnološko-metalurški fakultetTY - JOUR AU - Ostojić, Stanko M. AU - Šašić, Rajko PY - 2016 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/3450 AB - A simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel models and should be considered as their naturally constructed extension. The accuracy of the developed model has been verified by comparison with available simulation results as well as with previous models calculations. PB - Natl Inst Optoelectronics, Bucharest-Magurele T2 - Optoelectronics and Advanced Materials-Rapid Communications T1 - A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET EP - 54 IS - 1-2 SP - 50 VL - 10 UR - https://hdl.handle.net/21.15107/rcub_technorep_3450 ER -
@article{ author = "Ostojić, Stanko M. and Šašić, Rajko", year = "2016", abstract = "A simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel models and should be considered as their naturally constructed extension. The accuracy of the developed model has been verified by comparison with available simulation results as well as with previous models calculations.", publisher = "Natl Inst Optoelectronics, Bucharest-Magurele", journal = "Optoelectronics and Advanced Materials-Rapid Communications", title = "A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET", pages = "54-50", number = "1-2", volume = "10", url = "https://hdl.handle.net/21.15107/rcub_technorep_3450" }
Ostojić, S. M.,& Šašić, R.. (2016). A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET. in Optoelectronics and Advanced Materials-Rapid Communications Natl Inst Optoelectronics, Bucharest-Magurele., 10(1-2), 50-54. https://hdl.handle.net/21.15107/rcub_technorep_3450
Ostojić SM, Šašić R. A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET. in Optoelectronics and Advanced Materials-Rapid Communications. 2016;10(1-2):50-54. https://hdl.handle.net/21.15107/rcub_technorep_3450 .
Ostojić, Stanko M., Šašić, Rajko, "A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET" in Optoelectronics and Advanced Materials-Rapid Communications, 10, no. 1-2 (2016):50-54, https://hdl.handle.net/21.15107/rcub_technorep_3450 .