A simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel models and should be considered as their naturally constructed extension. The accuracy of the developed model has been verified by comparison with available simulation results as well as with previous models calculations.
TY - JOUR
AU - Ostojić, Stanko M.
AU - Šašić, Rajko
PY - 2016
UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/3450
AB - A simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel models and should be considered as their naturally constructed extension. The accuracy of the developed model has been verified by comparison with available simulation results as well as with previous models calculations.
PB - Natl Inst Optoelectronics, Bucharest-Magurele
T2 - Optoelectronics and Advanced Materials-Rapid Communications
T1 - A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET
EP - 54
IS - 1-2
SP - 50
VL - 10
UR - https://hdl.handle.net/21.15107/rcub_technorep_3450
ER -
@article{
author = "Ostojić, Stanko M. and Šašić, Rajko",
year = "2016",
abstract = "A simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel models and should be considered as their naturally constructed extension. The accuracy of the developed model has been verified by comparison with available simulation results as well as with previous models calculations.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Optoelectronics and Advanced Materials-Rapid Communications",
title = "A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET",
pages = "54-50",
number = "1-2",
volume = "10",
url = "https://hdl.handle.net/21.15107/rcub_technorep_3450"
}
Ostojić, S. M.,& Šašić, R.. (2016). A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET. in Optoelectronics and Advanced Materials-Rapid Communications
Natl Inst Optoelectronics, Bucharest-Magurele., 10(1-2), 50-54.
https://hdl.handle.net/21.15107/rcub_technorep_3450
Ostojić SM, Šašić R. A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET. in Optoelectronics and Advanced Materials-Rapid Communications. 2016;10(1-2):50-54.
https://hdl.handle.net/21.15107/rcub_technorep_3450 .
Ostojić, Stanko M., Šašić, Rajko, "A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET" in Optoelectronics and Advanced Materials-Rapid Communications, 10, no. 1-2 (2016):50-54,
https://hdl.handle.net/21.15107/rcub_technorep_3450 .
