A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET
Само за регистроване кориснике
2016
Чланак у часопису (Објављена верзија)

Метаподаци
Приказ свих података о документуАпстракт
A simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel models and should be considered as their naturally constructed extension. The accuracy of the developed model has been verified by comparison with available simulation results as well as with previous models calculations.
Кључне речи:
Surrounding Gate / Nanowire MOSFET / Short-Channel / 2D AnalysisИзвор:
Optoelectronics and Advanced Materials-Rapid Communications, 2016, 10, 1-2, 50-54Издавач:
- Natl Inst Optoelectronics, Bucharest-Magurele
Финансирање / пројекти:
- Оптоелектронски нанодимензиони системи - пут ка примени (RS-45003)
- Заједничка истраживања мерења и утицаја јонизујућег и УВ зрачења у области медицине и заштите животне средине (RS-43011)
Институција/група
Tehnološko-metalurški fakultetTY - JOUR AU - Ostojić, Stanko M. AU - Šašić, Rajko PY - 2016 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/3450 AB - A simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel models and should be considered as their naturally constructed extension. The accuracy of the developed model has been verified by comparison with available simulation results as well as with previous models calculations. PB - Natl Inst Optoelectronics, Bucharest-Magurele T2 - Optoelectronics and Advanced Materials-Rapid Communications T1 - A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET EP - 54 IS - 1-2 SP - 50 VL - 10 UR - https://hdl.handle.net/21.15107/rcub_technorep_3450 ER -
@article{ author = "Ostojić, Stanko M. and Šašić, Rajko", year = "2016", abstract = "A simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel models and should be considered as their naturally constructed extension. The accuracy of the developed model has been verified by comparison with available simulation results as well as with previous models calculations.", publisher = "Natl Inst Optoelectronics, Bucharest-Magurele", journal = "Optoelectronics and Advanced Materials-Rapid Communications", title = "A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET", pages = "54-50", number = "1-2", volume = "10", url = "https://hdl.handle.net/21.15107/rcub_technorep_3450" }
Ostojić, S. M.,& Šašić, R.. (2016). A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET. in Optoelectronics and Advanced Materials-Rapid Communications Natl Inst Optoelectronics, Bucharest-Magurele., 10(1-2), 50-54. https://hdl.handle.net/21.15107/rcub_technorep_3450
Ostojić SM, Šašić R. A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET. in Optoelectronics and Advanced Materials-Rapid Communications. 2016;10(1-2):50-54. https://hdl.handle.net/21.15107/rcub_technorep_3450 .
Ostojić, Stanko M., Šašić, Rajko, "A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET" in Optoelectronics and Advanced Materials-Rapid Communications, 10, no. 1-2 (2016):50-54, https://hdl.handle.net/21.15107/rcub_technorep_3450 .