A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET
Само за регистроване кориснике
2016
article (publishedVersion)

Метаподаци
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A simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel models and should be considered as their naturally constructed extension. The accuracy of the developed model has been verified by comparison with available simulation results as well as with previous models calculations.
Кључне речи:
Surrounding Gate / Nanowire MOSFET / Short-Channel / 2D AnalysisИзвор:
Optoelectronics and Advanced Materials-Rapid Communications, 2016, 10, 1-2, 50-54Издавач:
- Natl Inst Optoelectronics, Bucharest-Magurele
Финансирање / пројекти:
- info:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45003/RS// (RS-45003)
- info:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/43011/RS// (RS-43011)