TechnoRep - Repozitorijum Tehnološko-metalurškog fakulteta
Repozitorijum Tehnološko-metalurškog fakulteta
    • English
    • Српски
    • Српски (Serbia)
  • Srpski (latinica) 
    • Engleski
    • Srpski (ćirilica)
    • Srpski (latinica)
  • Prijava
Pregled zapisa 
  •   TechnoRep
  • Tehnološko-metalurški fakultet
  • Radovi istraživača / Researchers’ publications (TMF)
  • Pregled zapisa
  •   TechnoRep
  • Tehnološko-metalurški fakultet
  • Radovi istraživača / Researchers’ publications (TMF)
  • Pregled zapisa
JavaScript is disabled for your browser. Some features of this site may not work without it.

A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET

Samo za registrovane korisnike
2016
Autori
Ostojić, Stanko M.
Šašić, Rajko
Članak u časopisu (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentu
Apstrakt
A simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel models and should be considered as their naturally constructed extension. The accuracy of the developed model has been verified by comparison with available simulation results as well as with previous models calculations.
Ključne reči:
Surrounding Gate / Nanowire MOSFET / Short-Channel / 2D Analysis
Izvor:
Optoelectronics and Advanced Materials-Rapid Communications, 2016, 10, 1-2, 50-54
Izdavač:
  • Natl Inst Optoelectronics, Bucharest-Magurele
Finansiranje / projekti:
  • Optoelektronski nanodimenzioni sistemi - put ka primeni (RS-45003)
  • Zajednička istraživanja merenja i uticaja jonizujućeg i UV zračenja u oblasti medicine i zaštite životne sredine (RS-43011)

ISSN: 1842-6573

WoS: 000374426400013

[ Google Scholar ]
Handle
https://hdl.handle.net/21.15107/rcub_technorep_3450
URI
http://TechnoRep.tmf.bg.ac.rs/handle/123456789/3450
Kolekcije
  • Radovi istraživača / Researchers’ publications (TMF)
Institucija/grupa
Tehnološko-metalurški fakultet
TY  - JOUR
AU  - Ostojić, Stanko M.
AU  - Šašić, Rajko
PY  - 2016
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/3450
AB  - A simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel models and should be considered as their naturally constructed extension. The accuracy of the developed model has been verified by comparison with available simulation results as well as with previous models calculations.
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Optoelectronics and Advanced Materials-Rapid Communications
T1  - A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET
EP  - 54
IS  - 1-2
SP  - 50
VL  - 10
UR  - https://hdl.handle.net/21.15107/rcub_technorep_3450
ER  - 
@article{
author = "Ostojić, Stanko M. and Šašić, Rajko",
year = "2016",
abstract = "A simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel models and should be considered as their naturally constructed extension. The accuracy of the developed model has been verified by comparison with available simulation results as well as with previous models calculations.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Optoelectronics and Advanced Materials-Rapid Communications",
title = "A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET",
pages = "54-50",
number = "1-2",
volume = "10",
url = "https://hdl.handle.net/21.15107/rcub_technorep_3450"
}
Ostojić, S. M.,& Šašić, R.. (2016). A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET. in Optoelectronics and Advanced Materials-Rapid Communications
Natl Inst Optoelectronics, Bucharest-Magurele., 10(1-2), 50-54.
https://hdl.handle.net/21.15107/rcub_technorep_3450
Ostojić SM, Šašić R. A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET. in Optoelectronics and Advanced Materials-Rapid Communications. 2016;10(1-2):50-54.
https://hdl.handle.net/21.15107/rcub_technorep_3450 .
Ostojić, Stanko M., Šašić, Rajko, "A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET" in Optoelectronics and Advanced Materials-Rapid Communications, 10, no. 1-2 (2016):50-54,
https://hdl.handle.net/21.15107/rcub_technorep_3450 .

DSpace software copyright © 2002-2015  DuraSpace
O repozitorijumu TechnoRep | Pošaljite zapažanja

OpenAIRERCUB
 

 

Kompletan repozitorijumInstitucije/grupeAutoriNasloviTemeOva institucijaAutoriNasloviTeme

Statistika

Pregled statistika

DSpace software copyright © 2002-2015  DuraSpace
O repozitorijumu TechnoRep | Pošaljite zapažanja

OpenAIRERCUB