In this paper the influence of doping level in AlGaN and GaN on the carriers surface density in a channel of modulation doped field effect transistors (MODFETs) has been investigated. The carriers concentration profile in the channel (including the position of its famous peak) as well as the surface density have been found. Our calculations have been based on the Wigner Distribution Function (WDF) formalism. Thermal emission at the hetero-interface as well as the penetration of carriers into undoped spacer layer has been taken into account. The results are in good agreement with the available experimental data.
Keywords:
2DEG density / carrier concentration profile / MODFETs / quantum correction / thermal emission / Wigner Distribution Function
Source:
Materials Science Forum, 2002, 413, 39-44
Publisher:
Proceedings of the fourth Yugoslav Materials Research Society Conference (YUCOMAT IV)
TY - JOUR
AU - Šašić, Rajko
AU - Cevizović, D
AU - Ramović, Rifat M.
PY - 2002
UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/411
AB - In this paper the influence of doping level in AlGaN and GaN on the carriers surface density in a channel of modulation doped field effect transistors (MODFETs) has been investigated. The carriers concentration profile in the channel (including the position of its famous peak) as well as the surface density have been found. Our calculations have been based on the Wigner Distribution Function (WDF) formalism. Thermal emission at the hetero-interface as well as the penetration of carriers into undoped spacer layer has been taken into account. The results are in good agreement with the available experimental data.
PB - Proceedings of the fourth Yugoslav Materials Research Society Conference (YUCOMAT IV)
T2 - Materials Science Forum
T1 - Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel
EP - 44
SP - 39
VL - 413
DO - 10.4028/www.scientific.net/msf.413.39
ER -
@article{
author = "Šašić, Rajko and Cevizović, D and Ramović, Rifat M.",
year = "2002",
abstract = "In this paper the influence of doping level in AlGaN and GaN on the carriers surface density in a channel of modulation doped field effect transistors (MODFETs) has been investigated. The carriers concentration profile in the channel (including the position of its famous peak) as well as the surface density have been found. Our calculations have been based on the Wigner Distribution Function (WDF) formalism. Thermal emission at the hetero-interface as well as the penetration of carriers into undoped spacer layer has been taken into account. The results are in good agreement with the available experimental data.",
publisher = "Proceedings of the fourth Yugoslav Materials Research Society Conference (YUCOMAT IV)",
journal = "Materials Science Forum",
title = "Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel",
pages = "44-39",
volume = "413",
doi = "10.4028/www.scientific.net/msf.413.39"
}
Šašić, R., Cevizović, D.,& Ramović, R. M.. (2002). Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel. in Materials Science Forum
Proceedings of the fourth Yugoslav Materials Research Society Conference (YUCOMAT IV)., 413, 39-44.
https://doi.org/10.4028/www.scientific.net/msf.413.39
Šašić R, Cevizović D, Ramović RM. Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel. in Materials Science Forum. 2002;413:39-44.
doi:10.4028/www.scientific.net/msf.413.39 .
Šašić, Rajko, Cevizović, D, Ramović, Rifat M., "Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel" in Materials Science Forum, 413 (2002):39-44,
https://doi.org/10.4028/www.scientific.net/msf.413.39 . .
