Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel
Само за регистроване кориснике
2002
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In this paper the influence of doping level in AlGaN and GaN on the carriers surface density in a channel of modulation doped field effect transistors (MODFETs) has been investigated. The carriers concentration profile in the channel (including the position of its famous peak) as well as the surface density have been found. Our calculations have been based on the Wigner Distribution Function (WDF) formalism. Thermal emission at the hetero-interface as well as the penetration of carriers into undoped spacer layer has been taken into account. The results are in good agreement with the available experimental data.
Кључне речи:
2DEG density / carrier concentration profile / MODFETs / quantum correction / thermal emission / Wigner Distribution FunctionИзвор:
Materials Science Forum, 2002, 413, 39-44Издавач:
- Proceedings of the fourth Yugoslav Materials Research Society Conference (YUCOMAT IV)
DOI: 10.4028/www.scientific.net/msf.413.39
ISSN: 0255-5476
WoS: 000180730700008
Scopus: 2-s2.0-0036926638
Институција/група
Tehnološko-metalurški fakultetTY - JOUR AU - Šašić, Rajko AU - Cevizović, D AU - Ramović, Rifat M. PY - 2002 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/411 AB - In this paper the influence of doping level in AlGaN and GaN on the carriers surface density in a channel of modulation doped field effect transistors (MODFETs) has been investigated. The carriers concentration profile in the channel (including the position of its famous peak) as well as the surface density have been found. Our calculations have been based on the Wigner Distribution Function (WDF) formalism. Thermal emission at the hetero-interface as well as the penetration of carriers into undoped spacer layer has been taken into account. The results are in good agreement with the available experimental data. PB - Proceedings of the fourth Yugoslav Materials Research Society Conference (YUCOMAT IV) T2 - Materials Science Forum T1 - Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel EP - 44 SP - 39 VL - 413 DO - 10.4028/www.scientific.net/msf.413.39 ER -
@article{ author = "Šašić, Rajko and Cevizović, D and Ramović, Rifat M.", year = "2002", abstract = "In this paper the influence of doping level in AlGaN and GaN on the carriers surface density in a channel of modulation doped field effect transistors (MODFETs) has been investigated. The carriers concentration profile in the channel (including the position of its famous peak) as well as the surface density have been found. Our calculations have been based on the Wigner Distribution Function (WDF) formalism. Thermal emission at the hetero-interface as well as the penetration of carriers into undoped spacer layer has been taken into account. The results are in good agreement with the available experimental data.", publisher = "Proceedings of the fourth Yugoslav Materials Research Society Conference (YUCOMAT IV)", journal = "Materials Science Forum", title = "Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel", pages = "44-39", volume = "413", doi = "10.4028/www.scientific.net/msf.413.39" }
Šašić, R., Cevizović, D.,& Ramović, R. M.. (2002). Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel. in Materials Science Forum Proceedings of the fourth Yugoslav Materials Research Society Conference (YUCOMAT IV)., 413, 39-44. https://doi.org/10.4028/www.scientific.net/msf.413.39
Šašić R, Cevizović D, Ramović RM. Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel. in Materials Science Forum. 2002;413:39-44. doi:10.4028/www.scientific.net/msf.413.39 .
Šašić, Rajko, Cevizović, D, Ramović, Rifat M., "Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel" in Materials Science Forum, 413 (2002):39-44, https://doi.org/10.4028/www.scientific.net/msf.413.39 . .