Silicon nanostructuring by Ag ions implantation through nanosphere lithography mask
Само за регистроване кориснике
2019
Аутори
Modrić-Šahbazović, AlmedinaNovaković, Mirjana M.
Schmidt, Emanuel O.
Gazdić, Izet
Đokić, Veljko
Peruško, Davor
Bibić, Nataša M.
Ronning, Carsten
Rakočević, Zlatko Lj.
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
Nanosphere lithography is an effective technique for high throughput fabrication of well-ordered patterns on large areas. This study reports on nanostructuring of silicon samples by means of Ag ions implantation through self-organized polystyrene (PS) masks. The PS nanospheres with a diameter of similar to 150 nm were self-assembled in a hexagonal array on top of Si(100) wafers, and then used as a mask for subsequent 60 keV silver ion implantation. Different fluences were applied up to 2 x 10(16) ions/cm(2) in order to create a distribution of different sizes and densities of buried metal nanoparticles. The surface morphology and the subsurface structures were studied by scanning electron microscopy and cross-sectional transmission electron microscopy, as a function of the mask deformation upon irradiation and the implantation parameters itself. We demonstrate that Ag is implanted into Si only through the mask openings, thus forming a regular array of amorphized regions over the wide a...rea of silicon substrate. These fragments are of similar dimensions of the spheres with widths of about 190 nm and distributed over 60 nm in depth due to the given ion range. At the subsurface region of the implanted fragments, the synthesis of small sized and optically active Ag nanoparticles is clearly observed. The samples show a strong absorption peak in the long-wavelength region from 689 to 745 nm characteristic for surface plasmon resonance excitations, which could be fitted well using the Maxwell-Garnett's theory.
Кључне речи:
Ag nanoparticles / Nanostructuring / Ion beam implantation / Silicon / Polystyrene nanomask / SPR peakИзвор:
Optical Materials, 2019, 88, 508-515Издавач:
- Elsevier Science Bv, Amsterdam
Финансирање / пројекти:
- Функционални, функционализовани и усавршени нано материјали (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-45005)
- German Serbian DAAD bilateral collaboration [451-03-01038/2015-09118/18]
DOI: 10.1016/j.optmat.2018.12.022
ISSN: 0925-3467
WoS: 000461001600072
Scopus: 2-s2.0-85059233806
Институција/група
Inovacioni centarTY - JOUR AU - Modrić-Šahbazović, Almedina AU - Novaković, Mirjana M. AU - Schmidt, Emanuel O. AU - Gazdić, Izet AU - Đokić, Veljko AU - Peruško, Davor AU - Bibić, Nataša M. AU - Ronning, Carsten AU - Rakočević, Zlatko Lj. PY - 2019 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/4160 AB - Nanosphere lithography is an effective technique for high throughput fabrication of well-ordered patterns on large areas. This study reports on nanostructuring of silicon samples by means of Ag ions implantation through self-organized polystyrene (PS) masks. The PS nanospheres with a diameter of similar to 150 nm were self-assembled in a hexagonal array on top of Si(100) wafers, and then used as a mask for subsequent 60 keV silver ion implantation. Different fluences were applied up to 2 x 10(16) ions/cm(2) in order to create a distribution of different sizes and densities of buried metal nanoparticles. The surface morphology and the subsurface structures were studied by scanning electron microscopy and cross-sectional transmission electron microscopy, as a function of the mask deformation upon irradiation and the implantation parameters itself. We demonstrate that Ag is implanted into Si only through the mask openings, thus forming a regular array of amorphized regions over the wide area of silicon substrate. These fragments are of similar dimensions of the spheres with widths of about 190 nm and distributed over 60 nm in depth due to the given ion range. At the subsurface region of the implanted fragments, the synthesis of small sized and optically active Ag nanoparticles is clearly observed. The samples show a strong absorption peak in the long-wavelength region from 689 to 745 nm characteristic for surface plasmon resonance excitations, which could be fitted well using the Maxwell-Garnett's theory. PB - Elsevier Science Bv, Amsterdam T2 - Optical Materials T1 - Silicon nanostructuring by Ag ions implantation through nanosphere lithography mask EP - 515 SP - 508 VL - 88 DO - 10.1016/j.optmat.2018.12.022 ER -
@article{ author = "Modrić-Šahbazović, Almedina and Novaković, Mirjana M. and Schmidt, Emanuel O. and Gazdić, Izet and Đokić, Veljko and Peruško, Davor and Bibić, Nataša M. and Ronning, Carsten and Rakočević, Zlatko Lj.", year = "2019", abstract = "Nanosphere lithography is an effective technique for high throughput fabrication of well-ordered patterns on large areas. This study reports on nanostructuring of silicon samples by means of Ag ions implantation through self-organized polystyrene (PS) masks. The PS nanospheres with a diameter of similar to 150 nm were self-assembled in a hexagonal array on top of Si(100) wafers, and then used as a mask for subsequent 60 keV silver ion implantation. Different fluences were applied up to 2 x 10(16) ions/cm(2) in order to create a distribution of different sizes and densities of buried metal nanoparticles. The surface morphology and the subsurface structures were studied by scanning electron microscopy and cross-sectional transmission electron microscopy, as a function of the mask deformation upon irradiation and the implantation parameters itself. We demonstrate that Ag is implanted into Si only through the mask openings, thus forming a regular array of amorphized regions over the wide area of silicon substrate. These fragments are of similar dimensions of the spheres with widths of about 190 nm and distributed over 60 nm in depth due to the given ion range. At the subsurface region of the implanted fragments, the synthesis of small sized and optically active Ag nanoparticles is clearly observed. The samples show a strong absorption peak in the long-wavelength region from 689 to 745 nm characteristic for surface plasmon resonance excitations, which could be fitted well using the Maxwell-Garnett's theory.", publisher = "Elsevier Science Bv, Amsterdam", journal = "Optical Materials", title = "Silicon nanostructuring by Ag ions implantation through nanosphere lithography mask", pages = "515-508", volume = "88", doi = "10.1016/j.optmat.2018.12.022" }
Modrić-Šahbazović, A., Novaković, M. M., Schmidt, E. O., Gazdić, I., Đokić, V., Peruško, D., Bibić, N. M., Ronning, C.,& Rakočević, Z. Lj.. (2019). Silicon nanostructuring by Ag ions implantation through nanosphere lithography mask. in Optical Materials Elsevier Science Bv, Amsterdam., 88, 508-515. https://doi.org/10.1016/j.optmat.2018.12.022
Modrić-Šahbazović A, Novaković MM, Schmidt EO, Gazdić I, Đokić V, Peruško D, Bibić NM, Ronning C, Rakočević ZL. Silicon nanostructuring by Ag ions implantation through nanosphere lithography mask. in Optical Materials. 2019;88:508-515. doi:10.1016/j.optmat.2018.12.022 .
Modrić-Šahbazović, Almedina, Novaković, Mirjana M., Schmidt, Emanuel O., Gazdić, Izet, Đokić, Veljko, Peruško, Davor, Bibić, Nataša M., Ronning, Carsten, Rakočević, Zlatko Lj., "Silicon nanostructuring by Ag ions implantation through nanosphere lithography mask" in Optical Materials, 88 (2019):508-515, https://doi.org/10.1016/j.optmat.2018.12.022 . .