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Gain-maximized GaAs/AlGaAs quantum-cascade laser with digitally graded active region

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2002
435.pdf (794.6Kb)
Authors
Indjin, D
Tomić, S
Ikonić, Z
Harrison, P
Kelsall, RW
Milanović, V.
Kočinac, Saša
article (publishedVersion)
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Abstract
An advanced strategy for the optimal design and realization of a GaAs/AlGaAs quantum-cascade laser is presented. It relies on recently established inverse scattering techniques to design an optimal smooth active region profile, followed by a conversion to an almost equivalent digitally graded structure, comprising just two different alloy compositions. In order to compare the output characteristics of optimized and previously realized structures, the intersubband electron scattering transport in quantum cascade lasers is analyzed. A full self-consistent rate equation model which includes all relevant electron-longitudinal optical phonon and electron-electron scattering mechanisms between injector/collector, active region, and continuumlike states is employed. Whilst the gain coefficients and threshold currents calculated at 77 and 300 K for the structure with a standard triple quantum well active region show excellent agreement with recent experiments, a significant improvement of thes...e parameters is predicted for the optimized digitally graded quantum-cascade laser.

Source:
Applied Physics Letters, 2002, 81, 12, 2163-2165
Publisher:
  • Amer Inst Physics, Melville

DOI: 10.1063/1.1508166

ISSN: 0003-6951

WoS: 000177911200007

Scopus: 2-s2.0-79956048796
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URI
http://TechnoRep.tmf.bg.ac.rs/handle/123456789/438
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  • Radovi istraživača / Researchers’ publications (TMF)
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Tehnološko-metalurški fakultet

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