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dc.creatorVukašinović, Jelena
dc.creatorPočuča-Nešić, Milica
dc.creatorLuković-Golić, Danijela
dc.creatorRibić, Vesna
dc.creatorBranković, Zorica
dc.creatorSavić, Slavica M.
dc.creatorDapčević, Aleksandra
dc.creatorBernik, Slavko
dc.creatorPodlogar, Matejka
dc.creatorKocen, Matej
dc.creatorRapljenović, Željko
dc.creatorIvek, Tomislav
dc.creatorLazović, Vladimir
dc.creatorDojčinović, Biljana
dc.creatorBranković, Goran
dc.date.accessioned2021-03-10T14:16:38Z
dc.date.available2021-03-10T14:16:38Z
dc.date.issued2020
dc.identifier.issn0955-2219
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/4403
dc.description.abstractAntimony doped barium-stannate dense ceramic materials were synthesized using spark plasma sintering technique out of mechanically activated precursor powders. The influence of various Sb concentrations (x = 0.00 - 0.10) on properties of BaSn1-xSbxO3 ceramics was investigated. Relative densities of prepared samples were in the range of (79-96) %. TEM analysis revealed the presence of many dislocations in undoped BaSnO3, and their significant reduction upon doping with Sb. All samples except BaSn0.92Sb0.08O3 exhibit non-linear I-U characteristic, typical for semiconductors with potential barrier at grain boundaries. Low angle grain boundaries found only in BaSn0.92Sb0.08O3 caused the loss of potential barrier at grain boundaries which was confirmed by AC impedance spectroscopy measurements. Consequently, BaSn0.92Sb0.08O3 showed the lowest electrical resistivity and linear I-U characteristic. UV-vis analysis confirmed the increasing of band gap (Burstein-Moss shift) values in all doped samples.en
dc.publisherElsevier Sci Ltd, Oxford
dc.relationinfo:eu-repo/grantAgreement/MESTD/inst-2020/200053/RS//
dc.relationSlovenian Research AgencySlovenian Research Agency - Slovenia [P2-0084]
dc.relationCroatian Science Foundation [IP-2018-01-2730]
dc.rightsrestrictedAccess
dc.sourceJournal of the European Ceramic Society
dc.subjectBaSnO3en
dc.subjectSpark plasma sinteringen
dc.subjectPotential barrieren
dc.subjectLow angle grain boundariesen
dc.subjectElectrical conductivityen
dc.titleThe structural, electrical and optical properties of spark plasma sintered BaSn1-xSbxO3 ceramicsen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage5575
dc.citation.issue15
dc.citation.other40(15): 5566-5575
dc.citation.rankaM21~
dc.citation.spage5566
dc.citation.volume40
dc.identifier.doi10.1016/j.jeurceramsoc.2020.06.062
dc.identifier.rcubconv_6192
dc.identifier.scopus2-s2.0-85087286901
dc.identifier.wos000564251700002
dc.type.versionpublishedVersion


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