Приказ основних података о документу

dc.creatorNikezić, D
dc.creatorJanićijević, Aco
dc.date.accessioned2021-03-10T10:01:16Z
dc.date.available2021-03-10T10:01:16Z
dc.date.issued2002
dc.identifier.issn0969-8043
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/444
dc.description.abstractThe thickness of the layer of LR115 detector removed during etching was measured with a very precise instrument. Dependence of the bulk etch rate on temperature of the etching solution was investigated. It has been found that the etch rate is (3.27 +/- 0.08) mum/h at 60degreesC in 10%NaOH of water solution. It was also found that the track density in the detector irradiated to radon and its progeny increases linearly with the removed layer.en
dc.publisherPergamon-Elsevier Science Ltd, Oxford
dc.rightsrestrictedAccess
dc.sourceApplied Radiation and Isotopes
dc.subjectLR115 detectoren
dc.subjectbulk etch rateen
dc.subjectform Talysurfen
dc.subjectradon measurementsen
dc.titleBulk etching rate of LR115 detectorsen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage278
dc.citation.issue2
dc.citation.other57(2): 275-278
dc.citation.rankM22
dc.citation.spage275
dc.citation.volume57
dc.identifier.doi10.1016/S0969-8043(02)00109-4
dc.identifier.pmid12150287
dc.identifier.scopus2-s2.0-0036272909
dc.identifier.wos000176423600018
dc.type.versionpublishedVersion


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Приказ основних података о документу