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dc.creatorBjelajac, Anđelika
dc.creatorPetrović, Rada
dc.creatorStan, George E.
dc.creatorSocol, Gabriel
dc.creatorMihailescu, Andreea
dc.creatorMihailescu, Ion N.
dc.creatorVeltruska, Katerina
dc.creatorMatolin, Vladimir
dc.creatorSiketic, Zdravko
dc.creatorProvatas, George
dc.creatorJaksic, Milko
dc.creatorJanaćković, Đorđe
dc.date.accessioned2022-03-04T11:28:41Z
dc.date.available2022-03-04T11:28:41Z
dc.date.issued2022
dc.identifier.issn0272-8842
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/4996
dc.description.abstractAnodization was used to obtain a nanotubular TiO2 photoanode on F-SnO2 glass. Subsequent annealing in the CH4 atmosphere promoted the C-doping and improved the crystallinity of the TiO2 nanotubes. The pulsed laser deposition was applied to cover the nanotubes with Bi2O3, serving as a hole transport material. X-ray photoelectron spectroscopy analyses of the doped samples reveal a shift in the valence band's maximum position towards lower binding energy as compared to those observed for the undoped samples (annealed in the air). The doping positively affects the absorption by shifting the absorption edge to 567 nm. I-V measurements under illumination show that the C-doping of TiO2 increases the current density following the absorbance results. The highest open circuit voltage was reached for the samples with the 300 degrees C-deposited Bi2O3 layer, pointing to better quality of the p-n junction, hence of the contact between Bi2O3 and TiO2. This in situ annealing provided the formation of close contact between Bi2O3 and TiO2, which enabled a faster charge transport as compared to the contact obtained with no annealing or even with post annealing.en
dc.relationinfo:eu-repo/grantAgreement/MESTD/inst-2020/200135/RS//
dc.relationinfo:eu-repo/grantAgreement/MESTD/inst-2020/200287/RS//
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45019/RS//
dc.rightsrestrictedAccess
dc.sourceCeramics International
dc.subjectTiO2en
dc.subjectC-dopingen
dc.subjectBi2O3en
dc.subjectPLDen
dc.titleC-doped TiO2 nanotubes with pulsed laser deposited Bi2O3 films for photovoltaic applicationen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage4657
dc.citation.issue4
dc.citation.other48(4): 4649-4657
dc.citation.rankM21~
dc.citation.spage4649
dc.citation.volume48
dc.identifier.doi10.1016/j.ceramint.2021.10.251
dc.identifier.scopus2-s2.0-85118558093
dc.identifier.wos000743462400003
dc.type.versionpublishedVersion


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Приказ основних података о документу