TechnoRep - Faculty of Technology and Metallurgy Repository
University of Belgrade - Faculty of Technology and Metallurgy
    • English
    • Српски
    • Српски (Serbia)
  • English 
    • English
    • Serbian (Cyrillic)
    • Serbian (Latin)
  • Login
View Item 
  •   TechnoRep
  • Tehnološko-metalurški fakultet
  • Radovi istraživača / Researchers’ publications (TMF)
  • View Item
  •   TechnoRep
  • Tehnološko-metalurški fakultet
  • Radovi istraživača / Researchers’ publications (TMF)
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

The growth of sapphire single crystals

Thumbnail
2001
V66-no6-07.pdf (105.8Kb)
Authors
Golubović, Aleksandar
Nikolić, Slobodanka
Djurić, Stevan
Valčić, Andreja
Article (Published version)
Metadata
Show full item record
Abstract
Sapphire (Al2O3) single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grashof numbers. A critical crystal diameter dc = 20 mm and the critical rate of rotation ωc = 20 rpm were calculated from the hydrodynamics of the melt. The value of the rate of crystal growth was experimentally found to be 3.5 mm/h. According to our previous experiments, it was confirmed that three hours exposures to cone. H3PO4 at 593 K was suitable for chemical polishing. Also, three hours exposure to cone. H3PO4 at 523 K was found to be a suitable etching solution. The lattice parameters a = 0.47573 nm and c = 1.29893 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.
Keywords:
Czochralski technique / Etching / Growth / Sapphire / Single crystal
Source:
Journal of the Serbian Chemical Society, 2001, 66, 6, 411-418
Publisher:
  • Serbian Chemical Society

DOI: 10.2298/jsc0106411g

ISSN: 0352-5139

Scopus: 2-s2.0-0035536382
[ Google Scholar ]
13
URI
http://TechnoRep.tmf.bg.ac.rs/handle/123456789/5363
Collections
  • Radovi istraživača / Researchers’ publications (TMF)
Institution/Community
Tehnološko-metalurški fakultet
TY  - JOUR
AU  - Golubović, Aleksandar
AU  - Nikolić, Slobodanka
AU  - Djurić, Stevan
AU  - Valčić, Andreja
PY  - 2001
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/5363
AB  - Sapphire (Al2O3) single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grashof numbers. A critical crystal diameter dc = 20 mm and the critical rate of rotation ωc = 20 rpm were calculated from the hydrodynamics of the melt. The value of the rate of crystal growth was experimentally found to be 3.5 mm/h. According to our previous experiments, it was confirmed that three hours exposures to cone. H3PO4 at 593 K was suitable for chemical polishing. Also, three hours exposure to cone. H3PO4 at 523 K was found to be a suitable etching solution. The lattice parameters a = 0.47573 nm and c = 1.29893 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.
PB  - Serbian Chemical Society
T2  - Journal of the Serbian Chemical Society
T1  - The growth of sapphire single crystals
EP  - 418
IS  - 6
SP  - 411
VL  - 66
DO  - 10.2298/jsc0106411g
ER  - 
@article{
author = "Golubović, Aleksandar and Nikolić, Slobodanka and Djurić, Stevan and Valčić, Andreja",
year = "2001",
abstract = "Sapphire (Al2O3) single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grashof numbers. A critical crystal diameter dc = 20 mm and the critical rate of rotation ωc = 20 rpm were calculated from the hydrodynamics of the melt. The value of the rate of crystal growth was experimentally found to be 3.5 mm/h. According to our previous experiments, it was confirmed that three hours exposures to cone. H3PO4 at 593 K was suitable for chemical polishing. Also, three hours exposure to cone. H3PO4 at 523 K was found to be a suitable etching solution. The lattice parameters a = 0.47573 nm and c = 1.29893 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.",
publisher = "Serbian Chemical Society",
journal = "Journal of the Serbian Chemical Society",
title = "The growth of sapphire single crystals",
pages = "418-411",
number = "6",
volume = "66",
doi = "10.2298/jsc0106411g"
}
Golubović, A., Nikolić, S., Djurić, S.,& Valčić, A.. (2001). The growth of sapphire single crystals. in Journal of the Serbian Chemical Society
Serbian Chemical Society., 66(6), 411-418.
https://doi.org/10.2298/jsc0106411g
Golubović A, Nikolić S, Djurić S, Valčić A. The growth of sapphire single crystals. in Journal of the Serbian Chemical Society. 2001;66(6):411-418.
doi:10.2298/jsc0106411g .
Golubović, Aleksandar, Nikolić, Slobodanka, Djurić, Stevan, Valčić, Andreja, "The growth of sapphire single crystals" in Journal of the Serbian Chemical Society, 66, no. 6 (2001):411-418,
https://doi.org/10.2298/jsc0106411g . .

DSpace software copyright © 2002-2015  DuraSpace
About TechnoRep | Send Feedback

OpenAIRERCUB
 

 

All of DSpaceInstitutions/communitiesAuthorsTitlesSubjectsThis institutionAuthorsTitlesSubjects

Statistics

View Usage Statistics

DSpace software copyright © 2002-2015  DuraSpace
About TechnoRep | Send Feedback

OpenAIRERCUB