The application of MOSFETs as detectors or device components in pulse power technique requires an investigation of their characteristics in radiation fields. Computing possibilities of the renowned programs FOTELP and PENELOPE for determining the energy deposited in MOISFET structure and dose distribution within microscopic dimensions of the dosimeter sensitive volume were presented in this paper. Based on the obtained results, qualitative conclusions were drawn about the values of energy deposited in different material zones having various dimensions. The difference between the two codes used for calculations in materials physics and semiconductor technics, basically originates from the different physical models for numerical simulation of photon, positron, and electron transport through various materials.
Keywords:
FOTELP / gamma radiation / Monte Carlo method / MOSFET / PENELOPE
Source:
IEEE Transactions on Plasma Science, 2006, 34, 5, 1715-1718
Note:
15th IEEE International Pulsed Power Conference, 2005, Monterey, CA
TY - JOUR
AU - Stanković, Srboljub J.
AU - Ilic, Radovan D.
AU - Osmokrovic, Predrag
AU - Lončar, Boris B.
AU - Vasić, Aleksandra
PY - 2006
UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/5425
AB - The application of MOSFETs as detectors or device components in pulse power technique requires an investigation of their characteristics in radiation fields. Computing possibilities of the renowned programs FOTELP and PENELOPE for determining the energy deposited in MOISFET structure and dose distribution within microscopic dimensions of the dosimeter sensitive volume were presented in this paper. Based on the obtained results, qualitative conclusions were drawn about the values of energy deposited in different material zones having various dimensions. The difference between the two codes used for calculations in materials physics and semiconductor technics, basically originates from the different physical models for numerical simulation of photon, positron, and electron transport through various materials.
T2 - IEEE Transactions on Plasma Science
T1 - Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters
EP - 1718
IS - 5
SP - 1715
VL - 34
DO - 10.1109/TPS.2006.883327
ER -
@article{
author = "Stanković, Srboljub J. and Ilic, Radovan D. and Osmokrovic, Predrag and Lončar, Boris B. and Vasić, Aleksandra",
year = "2006",
abstract = "The application of MOSFETs as detectors or device components in pulse power technique requires an investigation of their characteristics in radiation fields. Computing possibilities of the renowned programs FOTELP and PENELOPE for determining the energy deposited in MOISFET structure and dose distribution within microscopic dimensions of the dosimeter sensitive volume were presented in this paper. Based on the obtained results, qualitative conclusions were drawn about the values of energy deposited in different material zones having various dimensions. The difference between the two codes used for calculations in materials physics and semiconductor technics, basically originates from the different physical models for numerical simulation of photon, positron, and electron transport through various materials.",
journal = "IEEE Transactions on Plasma Science",
title = "Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters",
pages = "1718-1715",
number = "5",
volume = "34",
doi = "10.1109/TPS.2006.883327"
}
Stanković, S. J., Ilic, R. D., Osmokrovic, P., Lončar, B. B.,& Vasić, A.. (2006). Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters. in IEEE Transactions on Plasma Science, 34(5), 1715-1718.
https://doi.org/10.1109/TPS.2006.883327
Stanković SJ, Ilic RD, Osmokrovic P, Lončar BB, Vasić A. Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters. in IEEE Transactions on Plasma Science. 2006;34(5):1715-1718.
doi:10.1109/TPS.2006.883327 .
Stanković, Srboljub J., Ilic, Radovan D., Osmokrovic, Predrag, Lončar, Boris B., Vasić, Aleksandra, "Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters" in IEEE Transactions on Plasma Science, 34, no. 5 (2006):1715-1718,
https://doi.org/10.1109/TPS.2006.883327 . .
