Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters
Нема приказа
Аутори
Stanković, Srboljub J.Ilic, Radovan D.
Osmokrovic, Predrag
Lončar, Boris B.
Vasić, Aleksandra
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
The application of MOSFETs as detectors or device components in pulse power technique requires an investigation of their characteristics in radiation fields. Computing possibilities of the renowned programs FOTELP and PENELOPE for determining the energy deposited in MOISFET structure and dose distribution within microscopic dimensions of the dosimeter sensitive volume were presented in this paper. Based on the obtained results, qualitative conclusions were drawn about the values of energy deposited in different material zones having various dimensions. The difference between the two codes used for calculations in materials physics and semiconductor technics, basically originates from the different physical models for numerical simulation of photon, positron, and electron transport through various materials.
Кључне речи:
FOTELP / gamma radiation / Monte Carlo method / MOSFET / PENELOPEИзвор:
IEEE Transactions on Plasma Science, 2006, 34, 5, 1715-1718Напомена:
- 15th IEEE International Pulsed Power Conference, 2005, Monterey, CA
DOI: 10.1109/TPS.2006.883327
ISSN: 0093-3813
WoS: 000241439700016
Scopus: 2-s2.0-33750395610
Институција/група
Tehnološko-metalurški fakultetTY - JOUR AU - Stanković, Srboljub J. AU - Ilic, Radovan D. AU - Osmokrovic, Predrag AU - Lončar, Boris B. AU - Vasić, Aleksandra PY - 2006 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/5425 AB - The application of MOSFETs as detectors or device components in pulse power technique requires an investigation of their characteristics in radiation fields. Computing possibilities of the renowned programs FOTELP and PENELOPE for determining the energy deposited in MOISFET structure and dose distribution within microscopic dimensions of the dosimeter sensitive volume were presented in this paper. Based on the obtained results, qualitative conclusions were drawn about the values of energy deposited in different material zones having various dimensions. The difference between the two codes used for calculations in materials physics and semiconductor technics, basically originates from the different physical models for numerical simulation of photon, positron, and electron transport through various materials. T2 - IEEE Transactions on Plasma Science T1 - Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters EP - 1718 IS - 5 SP - 1715 VL - 34 DO - 10.1109/TPS.2006.883327 ER -
@article{ author = "Stanković, Srboljub J. and Ilic, Radovan D. and Osmokrovic, Predrag and Lončar, Boris B. and Vasić, Aleksandra", year = "2006", abstract = "The application of MOSFETs as detectors or device components in pulse power technique requires an investigation of their characteristics in radiation fields. Computing possibilities of the renowned programs FOTELP and PENELOPE for determining the energy deposited in MOISFET structure and dose distribution within microscopic dimensions of the dosimeter sensitive volume were presented in this paper. Based on the obtained results, qualitative conclusions were drawn about the values of energy deposited in different material zones having various dimensions. The difference between the two codes used for calculations in materials physics and semiconductor technics, basically originates from the different physical models for numerical simulation of photon, positron, and electron transport through various materials.", journal = "IEEE Transactions on Plasma Science", title = "Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters", pages = "1718-1715", number = "5", volume = "34", doi = "10.1109/TPS.2006.883327" }
Stanković, S. J., Ilic, R. D., Osmokrovic, P., Lončar, B. B.,& Vasić, A.. (2006). Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters. in IEEE Transactions on Plasma Science, 34(5), 1715-1718. https://doi.org/10.1109/TPS.2006.883327
Stanković SJ, Ilic RD, Osmokrovic P, Lončar BB, Vasić A. Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters. in IEEE Transactions on Plasma Science. 2006;34(5):1715-1718. doi:10.1109/TPS.2006.883327 .
Stanković, Srboljub J., Ilic, Radovan D., Osmokrovic, Predrag, Lončar, Boris B., Vasić, Aleksandra, "Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters" in IEEE Transactions on Plasma Science, 34, no. 5 (2006):1715-1718, https://doi.org/10.1109/TPS.2006.883327 . .