This paper examines the reliability of commercial off the shelf (COTS) erasable programmable read only memory (EPROM) and electrically erasable programmable read only memory (EEPROM) components exposed to gamma radiation. Results obtained for 64 KB EPROM (NM27C512) and 16 KB EEPROM (M24128) components provide evidence that EPROMs have greater radiation hardness than EEPROMs. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in EEPROMs are irreversible. The obtained results are analysed and interpreted on the basis of gamma ray interaction with the oxide layer.
Source:
Journal of Physics D: Applied Physics, 2007, 40, 18, 5785-5789
TY - JOUR
AU - Vujisic, M.
AU - Osmokrović, P.
AU - Lončar, Boris
PY - 2007
UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/5507
AB - This paper examines the reliability of commercial off the shelf (COTS) erasable programmable read only memory (EPROM) and electrically erasable programmable read only memory (EEPROM) components exposed to gamma radiation. Results obtained for 64 KB EPROM (NM27C512) and 16 KB EEPROM (M24128) components provide evidence that EPROMs have greater radiation hardness than EEPROMs. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in EEPROMs are irreversible. The obtained results are analysed and interpreted on the basis of gamma ray interaction with the oxide layer.
PB - Institute of Physics Publishing
T2 - Journal of Physics D: Applied Physics
T1 - Gamma irradiation effects in programmable read only memories
EP - 5789
IS - 18
SP - 5785
VL - 40
DO - 10.1088/0022-3727/40/18/041
ER -
@article{
author = "Vujisic, M. and Osmokrović, P. and Lončar, Boris",
year = "2007",
abstract = "This paper examines the reliability of commercial off the shelf (COTS) erasable programmable read only memory (EPROM) and electrically erasable programmable read only memory (EEPROM) components exposed to gamma radiation. Results obtained for 64 KB EPROM (NM27C512) and 16 KB EEPROM (M24128) components provide evidence that EPROMs have greater radiation hardness than EEPROMs. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in EEPROMs are irreversible. The obtained results are analysed and interpreted on the basis of gamma ray interaction with the oxide layer.",
publisher = "Institute of Physics Publishing",
journal = "Journal of Physics D: Applied Physics",
title = "Gamma irradiation effects in programmable read only memories",
pages = "5789-5785",
number = "18",
volume = "40",
doi = "10.1088/0022-3727/40/18/041"
}
Vujisic, M., Osmokrović, P.,& Lončar, B.. (2007). Gamma irradiation effects in programmable read only memories. in Journal of Physics D: Applied Physics
Institute of Physics Publishing., 40(18), 5785-5789.
https://doi.org/10.1088/0022-3727/40/18/041
Vujisic M, Osmokrović P, Lončar B. Gamma irradiation effects in programmable read only memories. in Journal of Physics D: Applied Physics. 2007;40(18):5785-5789.
doi:10.1088/0022-3727/40/18/041 .
Vujisic, M., Osmokrović, P., Lončar, Boris, "Gamma irradiation effects in programmable read only memories" in Journal of Physics D: Applied Physics, 40, no. 18 (2007):5785-5789,
https://doi.org/10.1088/0022-3727/40/18/041 . .
