Gamma irradiation effects in programmable read only memories

Abstract

This paper examines the reliability of commercial off the shelf (COTS) erasable programmable read only memory (EPROM) and electrically erasable programmable read only memory (EEPROM) components exposed to gamma radiation. Results obtained for 64 KB EPROM (NM27C512) and 16 KB EEPROM (M24128) components provide evidence that EPROMs have greater radiation hardness than EEPROMs. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in EEPROMs are irreversible. The obtained results are analysed and interpreted on the basis of gamma ray interaction with the oxide layer.