Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo
Apstrakt
This work presents a characterization of radiation absorption properties of silicon carbide (SiC) as semiconductor for the realization of detectors for X-rays. SiC detectors can potentially reach superior performance with respect to all the other semiconductors presently employed in hazardous environments in nuclear and space science and technology. Physics and numerical modeling of photons transport through SiC detector is incorporated in non-destructive Monte Carlo method for determining the energy deposited and dose distribution. The Monte Carlo code has been adopted for numerical simulations for different detector conditions and configurations. The X-ray characterization of new SiC structures originates the improving of design of these detector systems.
Ključne reči:
Silicon Carbide / X-Ray DetectorIzvor:
Acta Physica Polonica A, 2011, 120, 2, 252-255Izdavač:
- Polish Acad Sciences Inst Physics, Warsaw
Finansiranje / projekti:
- Istraživanje mogućnosti primene otpadnih i recikliranih materijala u betonskim kompozitima, sa ocenom uticaja na životnu sredinu, u cilju promocije održivog građevinarstva u srbiji (RS-36017)
- Nove tehnologije za monitoring i zaštitu životnog okruženja od štetnih hemijskih supstanci i radijacionog opterećenja (RS-43009)
- Fizički i funkcionalni efekti interakcije zračenja sa elektrotehničkim i biološkim sistemima (RS-171007)
DOI: 10.12693/APhysPolA.120.252
ISSN: 0587-4246
WoS: 000291836900011
Scopus: 2-s2.0-79960142290
Institucija/grupa
Tehnološko-metalurški fakultetTY - JOUR AU - Stanković, Srboljub J. AU - Ilić, R. D. AU - Janković, Ksenija AU - Vasić-Milovanović, A. AU - Lončar, Boris PY - 2011 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/5629 AB - This work presents a characterization of radiation absorption properties of silicon carbide (SiC) as semiconductor for the realization of detectors for X-rays. SiC detectors can potentially reach superior performance with respect to all the other semiconductors presently employed in hazardous environments in nuclear and space science and technology. Physics and numerical modeling of photons transport through SiC detector is incorporated in non-destructive Monte Carlo method for determining the energy deposited and dose distribution. The Monte Carlo code has been adopted for numerical simulations for different detector conditions and configurations. The X-ray characterization of new SiC structures originates the improving of design of these detector systems. PB - Polish Acad Sciences Inst Physics, Warsaw T2 - Acta Physica Polonica A T1 - Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo EP - 255 IS - 2 SP - 252 VL - 120 DO - 10.12693/APhysPolA.120.252 ER -
@article{ author = "Stanković, Srboljub J. and Ilić, R. D. and Janković, Ksenija and Vasić-Milovanović, A. and Lončar, Boris", year = "2011", abstract = "This work presents a characterization of radiation absorption properties of silicon carbide (SiC) as semiconductor for the realization of detectors for X-rays. SiC detectors can potentially reach superior performance with respect to all the other semiconductors presently employed in hazardous environments in nuclear and space science and technology. Physics and numerical modeling of photons transport through SiC detector is incorporated in non-destructive Monte Carlo method for determining the energy deposited and dose distribution. The Monte Carlo code has been adopted for numerical simulations for different detector conditions and configurations. The X-ray characterization of new SiC structures originates the improving of design of these detector systems.", publisher = "Polish Acad Sciences Inst Physics, Warsaw", journal = "Acta Physica Polonica A", title = "Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo", pages = "255-252", number = "2", volume = "120", doi = "10.12693/APhysPolA.120.252" }
Stanković, S. J., Ilić, R. D., Janković, K., Vasić-Milovanović, A.,& Lončar, B.. (2011). Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo. in Acta Physica Polonica A Polish Acad Sciences Inst Physics, Warsaw., 120(2), 252-255. https://doi.org/10.12693/APhysPolA.120.252
Stanković SJ, Ilić RD, Janković K, Vasić-Milovanović A, Lončar B. Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo. in Acta Physica Polonica A. 2011;120(2):252-255. doi:10.12693/APhysPolA.120.252 .
Stanković, Srboljub J., Ilić, R. D., Janković, Ksenija, Vasić-Milovanović, A., Lončar, Boris, "Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo" in Acta Physica Polonica A, 120, no. 2 (2011):252-255, https://doi.org/10.12693/APhysPolA.120.252 . .