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Structural analysis, electronic and optical properties of the synthesized Sb2S3 nanowires with small band gap

Authorized Users Only
2014
Authors
Validžić, I.Lj.
Mitrić, M.
Abazović, N.D.
Jokić, B.M.
Milošević, A.S.
Popović, Z.S.
Vukajlović, F.R.
Article (Published version)
Metadata
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Abstract
We report a simple colloidal synthesis of two types of Sb2S 3 nanowires with small band gap and high aspect ratio. Field-emission scanning electron and transmission electron microscopies confirmed formation of high aspect ratio Sb2S3 nanowires, separated in the form of bundles and coalesced with each other in long bars. Diffuse reflectance and absorption spectroscopies revealed that the optical band-gap energies of the synthesized nanowires separated in the form of bundles are 1.56 and 1.59 eV, and coalesced with each other in long bars are 1.36 and 1.28 eV, respectively. The structure refinement showed that Sb2S3 powders belong to the orthorhombic structure with space group Pnma (no. 62). It was found that Sb2S3 nanowires separated in the form of bundles predominantly grow along the [0 1 0] direction being in the needle-like shape. The nanowires coalesced with each other in long bars rise in the form of long bars, are ribbon-like in shape and have expressed {1 0 1} facets which grow a...long the [0 1 0] direction. No peaks in photoluminescence spectra were observed in the spectral range from 250 to 600 nm. In order to shed more light on the experimental results concerning the band-gap energies and, in the literature generally poorly investigated electronic properties of the synthesized material, we performed theoretical calculations of the electronic structure and optical properties of the Sb2S3 samples synthesized here. This was done on the basis of density functional theory with the generalized gradient approximation, and also with an improved version of the exchange potential suggested recently by Tran and Blaha. The main characteristic is the significant improvement of the band gap value.

Keywords:
colloidal processing / electronic structure / Sb2S3 / semiconductor / solar energy material
Source:
Semiconductor Science and Technology, 2014, 29, 3, 035007-
Publisher:
  • IOP Publishing Ltd.
Funding / projects:
  • Size-, shape- and structure- dependent properties of nanoparticles and nanocomposites (RS-172056)
  • Magnetic and radionuclide labeled nanostructured materials for medical applications (RS-45015)
  • Electronic, transport and optical properties of nanostructured materials (RS-171033)

DOI: 10.1088/0268-1242/29/3/035007

ISSN: 0268-1242

WoS: 000333260600007

Scopus: 2-s2.0-84894264306
[ Google Scholar ]
43
38
URI
http://TechnoRep.tmf.bg.ac.rs/handle/123456789/5801
Collections
  • Radovi istraživača / Researchers’ publications (TMF)
Institution/Community
Tehnološko-metalurški fakultet
TY  - JOUR
AU  - Validžić, I.Lj.
AU  - Mitrić, M.
AU  - Abazović, N.D.
AU  - Jokić, B.M.
AU  - Milošević, A.S.
AU  - Popović, Z.S.
AU  - Vukajlović, F.R.
PY  - 2014
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/5801
AB  - We report a simple colloidal synthesis of two types of Sb2S 3 nanowires with small band gap and high aspect ratio. Field-emission scanning electron and transmission electron microscopies confirmed formation of high aspect ratio Sb2S3 nanowires, separated in the form of bundles and coalesced with each other in long bars. Diffuse reflectance and absorption spectroscopies revealed that the optical band-gap energies of the synthesized nanowires separated in the form of bundles are 1.56 and 1.59 eV, and coalesced with each other in long bars are 1.36 and 1.28 eV, respectively. The structure refinement showed that Sb2S3 powders belong to the orthorhombic structure with space group Pnma (no. 62). It was found that Sb2S3 nanowires separated in the form of bundles predominantly grow along the [0 1 0] direction being in the needle-like shape. The nanowires coalesced with each other in long bars rise in the form of long bars, are ribbon-like in shape and have expressed {1 0 1} facets which grow along the [0 1 0] direction. No peaks in photoluminescence spectra were observed in the spectral range from 250 to 600 nm. In order to shed more light on the experimental results concerning the band-gap energies and, in the literature generally poorly investigated electronic properties of the synthesized material, we performed theoretical calculations of the electronic structure and optical properties of the Sb2S3 samples synthesized here. This was done on the basis of density functional theory with the generalized gradient approximation, and also with an improved version of the exchange potential suggested recently by Tran and Blaha. The main characteristic is the significant improvement of the band gap value.
PB  - IOP Publishing Ltd.
T2  - Semiconductor Science and Technology
T1  - Structural analysis, electronic and optical properties of the synthesized Sb2S3 nanowires with small band gap
IS  - 3
SP  - 035007
VL  - 29
DO  - 10.1088/0268-1242/29/3/035007
ER  - 
@article{
author = "Validžić, I.Lj. and Mitrić, M. and Abazović, N.D. and Jokić, B.M. and Milošević, A.S. and Popović, Z.S. and Vukajlović, F.R.",
year = "2014",
abstract = "We report a simple colloidal synthesis of two types of Sb2S 3 nanowires with small band gap and high aspect ratio. Field-emission scanning electron and transmission electron microscopies confirmed formation of high aspect ratio Sb2S3 nanowires, separated in the form of bundles and coalesced with each other in long bars. Diffuse reflectance and absorption spectroscopies revealed that the optical band-gap energies of the synthesized nanowires separated in the form of bundles are 1.56 and 1.59 eV, and coalesced with each other in long bars are 1.36 and 1.28 eV, respectively. The structure refinement showed that Sb2S3 powders belong to the orthorhombic structure with space group Pnma (no. 62). It was found that Sb2S3 nanowires separated in the form of bundles predominantly grow along the [0 1 0] direction being in the needle-like shape. The nanowires coalesced with each other in long bars rise in the form of long bars, are ribbon-like in shape and have expressed {1 0 1} facets which grow along the [0 1 0] direction. No peaks in photoluminescence spectra were observed in the spectral range from 250 to 600 nm. In order to shed more light on the experimental results concerning the band-gap energies and, in the literature generally poorly investigated electronic properties of the synthesized material, we performed theoretical calculations of the electronic structure and optical properties of the Sb2S3 samples synthesized here. This was done on the basis of density functional theory with the generalized gradient approximation, and also with an improved version of the exchange potential suggested recently by Tran and Blaha. The main characteristic is the significant improvement of the band gap value.",
publisher = "IOP Publishing Ltd.",
journal = "Semiconductor Science and Technology",
title = "Structural analysis, electronic and optical properties of the synthesized Sb2S3 nanowires with small band gap",
number = "3",
pages = "035007",
volume = "29",
doi = "10.1088/0268-1242/29/3/035007"
}
Validžić, I.Lj., Mitrić, M., Abazović, N.D., Jokić, B.M., Milošević, A.S., Popović, Z.S.,& Vukajlović, F.R.. (2014). Structural analysis, electronic and optical properties of the synthesized Sb2S3 nanowires with small band gap. in Semiconductor Science and Technology
IOP Publishing Ltd.., 29(3), 035007.
https://doi.org/10.1088/0268-1242/29/3/035007
Validžić I, Mitrić M, Abazović N, Jokić B, Milošević A, Popović Z, Vukajlović F. Structural analysis, electronic and optical properties of the synthesized Sb2S3 nanowires with small band gap. in Semiconductor Science and Technology. 2014;29(3):035007.
doi:10.1088/0268-1242/29/3/035007 .
Validžić, I.Lj., Mitrić, M., Abazović, N.D., Jokić, B.M., Milošević, A.S., Popović, Z.S., Vukajlović, F.R., "Structural analysis, electronic and optical properties of the synthesized Sb2S3 nanowires with small band gap" in Semiconductor Science and Technology, 29, no. 3 (2014):035007,
https://doi.org/10.1088/0268-1242/29/3/035007 . .

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