In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.
TY - JOUR
AU - Fetahovic, Irfan S.
AU - Dolicanin, Edin C.
AU - Lazarević, Đorđe R.
AU - Lončar, Boris B.
PY - 2017
UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/5850
AB - In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.
T2 - Nuclear technology and radiation protection
T1 - Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies
EP - 392
IS - 4
SP - 381
VL - 32
DO - 10.2298/NTRP1704381F
ER -
@article{
author = "Fetahovic, Irfan S. and Dolicanin, Edin C. and Lazarević, Đorđe R. and Lončar, Boris B.",
year = "2017",
abstract = "In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.",
journal = "Nuclear technology and radiation protection",
title = "Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies",
pages = "392-381",
number = "4",
volume = "32",
doi = "10.2298/NTRP1704381F"
}
Fetahovic, I. S., Dolicanin, E. C., Lazarević, Đ. R.,& Lončar, B. B.. (2017). Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies. in Nuclear technology and radiation protection, 32(4), 381-392.
https://doi.org/10.2298/NTRP1704381F
Fetahovic IS, Dolicanin EC, Lazarević ĐR, Lončar BB. Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies. in Nuclear technology and radiation protection. 2017;32(4):381-392.
doi:10.2298/NTRP1704381F .
Fetahovic, Irfan S., Dolicanin, Edin C., Lazarević, Đorđe R., Lončar, Boris B., "Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies" in Nuclear technology and radiation protection, 32, no. 4 (2017):381-392,
https://doi.org/10.2298/NTRP1704381F . .
