PVD growth of FCC metal films on single crystal Si and Ge substrates
Само за регистроване кориснике
1999
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
Epitaxial films of the fcc metals Al, Au, Ag and Ni were grown by physical vapor deposition on Si and Ge (111), (110) and (100) substrates at different deposition temperatures. The epitaxial relationships and morphological features of these films were characterized by transmission electron microscopy and diffraction in plan view and cross section. Ag formed single crystal films on all substrates at all temperatures. Au and Al could be grown as bicrystals, and under some conditions, Al and Ni grew as tricrystal films. The morphological effects of diffusion at the metal/substrate interface are ascribed to diffusion induced grain boundary migration.
Кључне речи:
Aluminum / Crystal lattices / Epitaxial growth / Film growth / Germanium / Gold / Interfaces (materials) / Nickel / Silicon / Silver / Single crystals / Vapor deposition / ace centered cubic (FCC) metals / Physical vapor deposition (PVD) / Metallic filmsИзвор:
Materials Research Society Symposium - Proceedings, 1999, 562, 93-102Издавач:
- Materials Research Society
Финансирање / пројекти:
- Office of Basic Energy Sciences, Materials Sciences Division of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098
Напомена:
- The 1999 MRS Spring Meeting - Symposium L 'Polycrystalline Metal and Magnetic Thin Films', 5 April 1998 through 8 April 1998
Институција/група
Tehnološko-metalurški fakultetTY - CONF AU - Westmacott, Kenneth H. AU - Hinderberger, Stefan AU - Radetić, Tamara AU - Dahmen, Ulrich PY - 1999 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/7267 AB - Epitaxial films of the fcc metals Al, Au, Ag and Ni were grown by physical vapor deposition on Si and Ge (111), (110) and (100) substrates at different deposition temperatures. The epitaxial relationships and morphological features of these films were characterized by transmission electron microscopy and diffraction in plan view and cross section. Ag formed single crystal films on all substrates at all temperatures. Au and Al could be grown as bicrystals, and under some conditions, Al and Ni grew as tricrystal films. The morphological effects of diffusion at the metal/substrate interface are ascribed to diffusion induced grain boundary migration. PB - Materials Research Society C3 - Materials Research Society Symposium - Proceedings T1 - PVD growth of FCC metal films on single crystal Si and Ge substrates EP - 102 SP - 93 VL - 562 DO - 10.1557/proc-562-93 ER -
@conference{ author = "Westmacott, Kenneth H. and Hinderberger, Stefan and Radetić, Tamara and Dahmen, Ulrich", year = "1999", abstract = "Epitaxial films of the fcc metals Al, Au, Ag and Ni were grown by physical vapor deposition on Si and Ge (111), (110) and (100) substrates at different deposition temperatures. The epitaxial relationships and morphological features of these films were characterized by transmission electron microscopy and diffraction in plan view and cross section. Ag formed single crystal films on all substrates at all temperatures. Au and Al could be grown as bicrystals, and under some conditions, Al and Ni grew as tricrystal films. The morphological effects of diffusion at the metal/substrate interface are ascribed to diffusion induced grain boundary migration.", publisher = "Materials Research Society", journal = "Materials Research Society Symposium - Proceedings", title = "PVD growth of FCC metal films on single crystal Si and Ge substrates", pages = "102-93", volume = "562", doi = "10.1557/proc-562-93" }
Westmacott, K. H., Hinderberger, S., Radetić, T.,& Dahmen, U.. (1999). PVD growth of FCC metal films on single crystal Si and Ge substrates. in Materials Research Society Symposium - Proceedings Materials Research Society., 562, 93-102. https://doi.org/10.1557/proc-562-93
Westmacott KH, Hinderberger S, Radetić T, Dahmen U. PVD growth of FCC metal films on single crystal Si and Ge substrates. in Materials Research Society Symposium - Proceedings. 1999;562:93-102. doi:10.1557/proc-562-93 .
Westmacott, Kenneth H., Hinderberger, Stefan, Radetić, Tamara, Dahmen, Ulrich, "PVD growth of FCC metal films on single crystal Si and Ge substrates" in Materials Research Society Symposium - Proceedings, 562 (1999):93-102, https://doi.org/10.1557/proc-562-93 . .