Temperature Dependent Thermal Conductivity of Symmetrically Strained Si/Ge Superlattices
Нема приказа
Аутори
Borca-Tasciuc, TheodorianLiu, Jianlin
Zeng, Taofang
Liu, Weili
Song., David W
Moore, Caroline D.
Chen, Gang
Wang, Kang L.
Goorsky, Mark S.
Radetić, Tamara
Gronsky, Ronald
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
Experimental evidence for a significant thermal conductivity reduction has been reported in recent years for GaAs/AlAs, Si/Ge, and Bi2Te3/Sb2Te3 superlattices. Previously reported experimental studies on Si/Ge superlattices are based on samples grown by metal oxide chemical vapor deposition (MOCVD) on GaAs substrates with Ge buffers. In this work, we present experimental results on the temperature dependent thermal conductivity of symmetrically strained Si/Ge superlattices grown by molecular beam epitaxy (MBE) as a function of the superlattice period and the growth temperature. Thermal conductivity measurements are performed using a differential Sco method. In this technique, the temperature drop across the superlattice film is experimentally determined and used to estimate the thermal conductivity of the film. Transmission electron microscopy (TEM) is employed to study the quality of the superlattice and the influence of the growth temperature on the superlattice structure. For all th...e superlattices studied, the measured thermal conductivity values are lower than that of the Sio sGco s alloy. Furthermore, the measured thermal conductivity of a 40A period Si/Ge superlattice with high dislocation density is comparable to the calculated minimum thermal conductivity of the constituent bulk materials.
Кључне речи:
Bismuth compounds / Chemical vapor deposition / Gallium arsenide / High resolution transmission electron microscopy / III-V semiconductors / Molecular beam epitaxy / Semiconducting gallium / Si-Ge alloys / Thermal conductivityИзвор:
ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE), 1999, 1999-Q, 117-122Издавач:
- ASME (American Society of Mechanical Engineers)
Напомена:
- ASME 1999 International Mechanical Engineering Congress and Exposition, IMECE 1999, Nashville, 14 November 1999 through 19 November 1999
Институција/група
Tehnološko-metalurški fakultetTY - CONF AU - Borca-Tasciuc, Theodorian AU - Liu, Jianlin AU - Zeng, Taofang AU - Liu, Weili AU - Song., David W AU - Moore, Caroline D. AU - Chen, Gang AU - Wang, Kang L. AU - Goorsky, Mark S. AU - Radetić, Tamara AU - Gronsky, Ronald PY - 1999 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/7269 AB - Experimental evidence for a significant thermal conductivity reduction has been reported in recent years for GaAs/AlAs, Si/Ge, and Bi2Te3/Sb2Te3 superlattices. Previously reported experimental studies on Si/Ge superlattices are based on samples grown by metal oxide chemical vapor deposition (MOCVD) on GaAs substrates with Ge buffers. In this work, we present experimental results on the temperature dependent thermal conductivity of symmetrically strained Si/Ge superlattices grown by molecular beam epitaxy (MBE) as a function of the superlattice period and the growth temperature. Thermal conductivity measurements are performed using a differential Sco method. In this technique, the temperature drop across the superlattice film is experimentally determined and used to estimate the thermal conductivity of the film. Transmission electron microscopy (TEM) is employed to study the quality of the superlattice and the influence of the growth temperature on the superlattice structure. For all the superlattices studied, the measured thermal conductivity values are lower than that of the Sio sGco s alloy. Furthermore, the measured thermal conductivity of a 40A period Si/Ge superlattice with high dislocation density is comparable to the calculated minimum thermal conductivity of the constituent bulk materials. PB - ASME (American Society of Mechanical Engineers) C3 - ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE) T1 - Temperature Dependent Thermal Conductivity of Symmetrically Strained Si/Ge Superlattices EP - 122 SP - 117 VL - 1999-Q DO - 10.1115/imece1999-1069 ER -
@conference{ author = "Borca-Tasciuc, Theodorian and Liu, Jianlin and Zeng, Taofang and Liu, Weili and Song., David W and Moore, Caroline D. and Chen, Gang and Wang, Kang L. and Goorsky, Mark S. and Radetić, Tamara and Gronsky, Ronald", year = "1999", abstract = "Experimental evidence for a significant thermal conductivity reduction has been reported in recent years for GaAs/AlAs, Si/Ge, and Bi2Te3/Sb2Te3 superlattices. Previously reported experimental studies on Si/Ge superlattices are based on samples grown by metal oxide chemical vapor deposition (MOCVD) on GaAs substrates with Ge buffers. In this work, we present experimental results on the temperature dependent thermal conductivity of symmetrically strained Si/Ge superlattices grown by molecular beam epitaxy (MBE) as a function of the superlattice period and the growth temperature. Thermal conductivity measurements are performed using a differential Sco method. In this technique, the temperature drop across the superlattice film is experimentally determined and used to estimate the thermal conductivity of the film. Transmission electron microscopy (TEM) is employed to study the quality of the superlattice and the influence of the growth temperature on the superlattice structure. For all the superlattices studied, the measured thermal conductivity values are lower than that of the Sio sGco s alloy. Furthermore, the measured thermal conductivity of a 40A period Si/Ge superlattice with high dislocation density is comparable to the calculated minimum thermal conductivity of the constituent bulk materials.", publisher = "ASME (American Society of Mechanical Engineers)", journal = "ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)", title = "Temperature Dependent Thermal Conductivity of Symmetrically Strained Si/Ge Superlattices", pages = "122-117", volume = "1999-Q", doi = "10.1115/imece1999-1069" }
Borca-Tasciuc, T., Liu, J., Zeng, T., Liu, W., Song., D. W., Moore, C. D., Chen, G., Wang, K. L., Goorsky, M. S., Radetić, T.,& Gronsky, R.. (1999). Temperature Dependent Thermal Conductivity of Symmetrically Strained Si/Ge Superlattices. in ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE) ASME (American Society of Mechanical Engineers)., 1999-Q, 117-122. https://doi.org/10.1115/imece1999-1069
Borca-Tasciuc T, Liu J, Zeng T, Liu W, Song. DW, Moore CD, Chen G, Wang KL, Goorsky MS, Radetić T, Gronsky R. Temperature Dependent Thermal Conductivity of Symmetrically Strained Si/Ge Superlattices. in ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE). 1999;1999-Q:117-122. doi:10.1115/imece1999-1069 .
Borca-Tasciuc, Theodorian, Liu, Jianlin, Zeng, Taofang, Liu, Weili, Song., David W, Moore, Caroline D., Chen, Gang, Wang, Kang L., Goorsky, Mark S., Radetić, Tamara, Gronsky, Ronald, "Temperature Dependent Thermal Conductivity of Symmetrically Strained Si/Ge Superlattices" in ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE), 1999-Q (1999):117-122, https://doi.org/10.1115/imece1999-1069 . .