dc.creator | Liu, Jianlin L. | |
dc.creator | Tang, Yinsheng S. | |
dc.creator | Wang, Kang L. | |
dc.creator | Radetić, Tamara | |
dc.creator | Gronsky, Ronald | |
dc.date.accessioned | 2024-02-27T11:46:02Z | |
dc.date.available | 2024-02-27T11:46:02Z | |
dc.date.issued | 1999 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | http://TechnoRep.tmf.bg.ac.rs/handle/123456789/7273 | |
dc.description.abstract | We present a Raman scattering study of a self-organized Ge dot superlattice. The structure, which consists of 20 periods of Ge quantum dots sandwiched by 6 nm Si spacers, is grown on a Si (100) substrate by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy is used to characterize the structural properties of these Ge dots. Raman spectrum shows a downward shift of the Ge–Ge mode, which is attributed to the phonon confinement in the Ge dots. From polarization dependent Raman spectra, strong inter-sub-level transition in the Ge quantum dots is observed. From a simple calculation, the observed peak at 1890
in the polarized spectrum is attributed to the transition between the first two heavy hole states of the Ge quantum dots. | sr |
dc.language.iso | en | sr |
dc.publisher | American Institute of Physics Inc. | sr |
dc.relation | National Science Foundation (DMR-9520893) | sr |
dc.relation | ARO (DAAG55-98-1-0358) | sr |
dc.relation | Low Power MURI (DAAH049610005) | sr |
dc.rights | restrictedAccess | sr |
dc.source | Applied Physics Letters | sr |
dc.title | Raman scattering from a self-organized Ge dot superlattice | sr |
dc.type | article | sr |
dc.rights.license | ARR | sr |
dc.citation.epage | 1865 | |
dc.citation.issue | 13 | |
dc.citation.spage | 1863 | |
dc.citation.volume | 74 | |
dc.identifier.doi | 10.1063/1.123694 | |
dc.identifier.scopus | 2-s2.0-0032614781 | |
dc.type.version | publishedVersion | sr |