Analytical model of electric field in heterojunction region of HFET structure
Само за регистроване кориснике
2005
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
A new analytical model of electric field in heterojunction region of heterostructure field effect transistor (HFET), is presented. Electric field dependences on surface density of two-dimensional electron gas and surface density of ionized acceptors in buffer layer are included in developed model, The expression of the electric field intensity is given by using the new correction coefficient. The new coefficient emphasizes more precisely extremely asymmetric spreading of the electric field in the vicinity of a heterojunction. Proposed model is simple and it can be straightforwardly implemented. It can be applied to quite different types of HFETs. The results derived from simulations based on the exposed model are in very good agreement with the already known ones, available in literature.
Кључне речи:
Heterostructure Field Effect Transistor (HFET) / electric field / analytical modelИзвор:
Journal of Optoelectronics and Advanced Materials, 2005, 7, 3, 1611-1617Издавач:
- Natl Inst Optoelectronics, Bucharest-Magurele
Институција/група
Tehnološko-metalurški fakultetTY - JOUR AU - Lukić, Petar M. AU - Ramović, Rifat M. AU - Šašić, Rajko PY - 2005 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/734 AB - A new analytical model of electric field in heterojunction region of heterostructure field effect transistor (HFET), is presented. Electric field dependences on surface density of two-dimensional electron gas and surface density of ionized acceptors in buffer layer are included in developed model, The expression of the electric field intensity is given by using the new correction coefficient. The new coefficient emphasizes more precisely extremely asymmetric spreading of the electric field in the vicinity of a heterojunction. Proposed model is simple and it can be straightforwardly implemented. It can be applied to quite different types of HFETs. The results derived from simulations based on the exposed model are in very good agreement with the already known ones, available in literature. PB - Natl Inst Optoelectronics, Bucharest-Magurele T2 - Journal of Optoelectronics and Advanced Materials T1 - Analytical model of electric field in heterojunction region of HFET structure EP - 1617 IS - 3 SP - 1611 VL - 7 UR - https://hdl.handle.net/21.15107/rcub_technorep_734 ER -
@article{ author = "Lukić, Petar M. and Ramović, Rifat M. and Šašić, Rajko", year = "2005", abstract = "A new analytical model of electric field in heterojunction region of heterostructure field effect transistor (HFET), is presented. Electric field dependences on surface density of two-dimensional electron gas and surface density of ionized acceptors in buffer layer are included in developed model, The expression of the electric field intensity is given by using the new correction coefficient. The new coefficient emphasizes more precisely extremely asymmetric spreading of the electric field in the vicinity of a heterojunction. Proposed model is simple and it can be straightforwardly implemented. It can be applied to quite different types of HFETs. The results derived from simulations based on the exposed model are in very good agreement with the already known ones, available in literature.", publisher = "Natl Inst Optoelectronics, Bucharest-Magurele", journal = "Journal of Optoelectronics and Advanced Materials", title = "Analytical model of electric field in heterojunction region of HFET structure", pages = "1617-1611", number = "3", volume = "7", url = "https://hdl.handle.net/21.15107/rcub_technorep_734" }
Lukić, P. M., Ramović, R. M.,& Šašić, R.. (2005). Analytical model of electric field in heterojunction region of HFET structure. in Journal of Optoelectronics and Advanced Materials Natl Inst Optoelectronics, Bucharest-Magurele., 7(3), 1611-1617. https://hdl.handle.net/21.15107/rcub_technorep_734
Lukić PM, Ramović RM, Šašić R. Analytical model of electric field in heterojunction region of HFET structure. in Journal of Optoelectronics and Advanced Materials. 2005;7(3):1611-1617. https://hdl.handle.net/21.15107/rcub_technorep_734 .
Lukić, Petar M., Ramović, Rifat M., Šašić, Rajko, "Analytical model of electric field in heterojunction region of HFET structure" in Journal of Optoelectronics and Advanced Materials, 7, no. 3 (2005):1611-1617, https://hdl.handle.net/21.15107/rcub_technorep_734 .