Analytical model of electric field in heterojunction region of HFET structure

Abstract

A new analytical model of electric field in heterojunction region of heterostructure field effect transistor (HFET), is presented. Electric field dependences on surface density of two-dimensional electron gas and surface density of ionized acceptors in buffer layer are included in developed model, The expression of the electric field intensity is given by using the new correction coefficient. The new coefficient emphasizes more precisely extremely asymmetric spreading of the electric field in the vicinity of a heterojunction. Proposed model is simple and it can be straightforwardly implemented. It can be applied to quite different types of HFETs. The results derived from simulations based on the exposed model are in very good agreement with the already known ones, available in literature.