HEMT carrier mobility analytical model
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2005
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Metapodaci
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In this paper a new analytical carrier mobility model of a heterostructure unipolar transistor, High Electron Mobility Transistor (HEMT), is presented. The influence of the two dimensional electron gas confined in a HEMT channel on the device carrier mobility, is considered. The mobility dependence on temperature is also included in the model. Advantages of this model are its simplicity and straightforward implementation. Besides, it promises to be applied to quite different types of HEMTs. The model was tested. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained ones, available in literature.
Ključne reči:
carrier mobility model / High Electron Mobility Transistor (HEMT)Izvor:
Materials Science Forum, 2005, 494, 43-48Izdavač:
- 6th Conference of the Yugoslav Materials Research Society, YUCOMAT VI: Current Research in Advanced Materials and Processes
DOI: 10.4028/0-87849-971-7.43
ISSN: 0255-5476
PubMed:
WoS: 000230985800008
Scopus: 2-s2.0-22544444082
Institucija/grupa
Tehnološko-metalurški fakultetTY - JOUR AU - Lukić, Petar M. AU - Ramović, Rifat M. AU - Šašić, Rajko PY - 2005 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/735 AB - In this paper a new analytical carrier mobility model of a heterostructure unipolar transistor, High Electron Mobility Transistor (HEMT), is presented. The influence of the two dimensional electron gas confined in a HEMT channel on the device carrier mobility, is considered. The mobility dependence on temperature is also included in the model. Advantages of this model are its simplicity and straightforward implementation. Besides, it promises to be applied to quite different types of HEMTs. The model was tested. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained ones, available in literature. PB - 6th Conference of the Yugoslav Materials Research Society, YUCOMAT VI: Current Research in Advanced Materials and Processes T2 - Materials Science Forum T1 - HEMT carrier mobility analytical model EP - 48 SP - 43 VL - 494 DO - 10.4028/0-87849-971-7.43 ER -
@article{ author = "Lukić, Petar M. and Ramović, Rifat M. and Šašić, Rajko", year = "2005", abstract = "In this paper a new analytical carrier mobility model of a heterostructure unipolar transistor, High Electron Mobility Transistor (HEMT), is presented. The influence of the two dimensional electron gas confined in a HEMT channel on the device carrier mobility, is considered. The mobility dependence on temperature is also included in the model. Advantages of this model are its simplicity and straightforward implementation. Besides, it promises to be applied to quite different types of HEMTs. The model was tested. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained ones, available in literature.", publisher = "6th Conference of the Yugoslav Materials Research Society, YUCOMAT VI: Current Research in Advanced Materials and Processes", journal = "Materials Science Forum", title = "HEMT carrier mobility analytical model", pages = "48-43", volume = "494", doi = "10.4028/0-87849-971-7.43" }
Lukić, P. M., Ramović, R. M.,& Šašić, R.. (2005). HEMT carrier mobility analytical model. in Materials Science Forum 6th Conference of the Yugoslav Materials Research Society, YUCOMAT VI: Current Research in Advanced Materials and Processes., 494, 43-48. https://doi.org/10.4028/0-87849-971-7.43
Lukić PM, Ramović RM, Šašić R. HEMT carrier mobility analytical model. in Materials Science Forum. 2005;494:43-48. doi:10.4028/0-87849-971-7.43 .
Lukić, Petar M., Ramović, Rifat M., Šašić, Rajko, "HEMT carrier mobility analytical model" in Materials Science Forum, 494 (2005):43-48, https://doi.org/10.4028/0-87849-971-7.43 . .