In this paper modern approach to the investigation of carriers' concentration applicable to various semiconductor structures has been developed. The model has exploited transport equation with the quantum correction term included; this transport equation is a consequence of density matrix formalism and moment expansion of corresponding expressions. The achievements of this approach have been tested in the investigation of widely used semiconductor structures. The preliminary theoretical results have been compared with results available in the literature and previously formed knowledge related to this topic.
Keywords:
carriers' concentration / quantum well / quantum correction
Source:
Journal of Optoelectronics and Advanced Materials, 2006, 8, 4, 1418-1423
TY - JOUR
AU - Ramović, Rifat M.
AU - Šašić, Rajko
AU - Lukić, Petar M.
PY - 2006
UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/877
AB - In this paper modern approach to the investigation of carriers' concentration applicable to various semiconductor structures has been developed. The model has exploited transport equation with the quantum correction term included; this transport equation is a consequence of density matrix formalism and moment expansion of corresponding expressions. The achievements of this approach have been tested in the investigation of widely used semiconductor structures. The preliminary theoretical results have been compared with results available in the literature and previously formed knowledge related to this topic.
PB - Natl Inst Optoelectronics, Bucharest-Magurele
T2 - Journal of Optoelectronics and Advanced Materials
T1 - Novel approach to the investigation of carriers' concentration in various semiconductor structures
EP - 1423
IS - 4
SP - 1418
VL - 8
UR - https://hdl.handle.net/21.15107/rcub_technorep_877
ER -
@article{
author = "Ramović, Rifat M. and Šašić, Rajko and Lukić, Petar M.",
year = "2006",
abstract = "In this paper modern approach to the investigation of carriers' concentration applicable to various semiconductor structures has been developed. The model has exploited transport equation with the quantum correction term included; this transport equation is a consequence of density matrix formalism and moment expansion of corresponding expressions. The achievements of this approach have been tested in the investigation of widely used semiconductor structures. The preliminary theoretical results have been compared with results available in the literature and previously formed knowledge related to this topic.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "Novel approach to the investigation of carriers' concentration in various semiconductor structures",
pages = "1423-1418",
number = "4",
volume = "8",
url = "https://hdl.handle.net/21.15107/rcub_technorep_877"
}
Ramović, R. M., Šašić, R.,& Lukić, P. M.. (2006). Novel approach to the investigation of carriers' concentration in various semiconductor structures. in Journal of Optoelectronics and Advanced Materials
Natl Inst Optoelectronics, Bucharest-Magurele., 8(4), 1418-1423.
https://hdl.handle.net/21.15107/rcub_technorep_877
Ramović RM, Šašić R, Lukić PM. Novel approach to the investigation of carriers' concentration in various semiconductor structures. in Journal of Optoelectronics and Advanced Materials. 2006;8(4):1418-1423.
https://hdl.handle.net/21.15107/rcub_technorep_877 .
Ramović, Rifat M., Šašić, Rajko, Lukić, Petar M., "Novel approach to the investigation of carriers' concentration in various semiconductor structures" in Journal of Optoelectronics and Advanced Materials, 8, no. 4 (2006):1418-1423,
https://hdl.handle.net/21.15107/rcub_technorep_877 .
