Novel approach to the investigation of carriers' concentration in various semiconductor structures
Abstract
In this paper modern approach to the investigation of carriers' concentration applicable to various semiconductor structures has been developed. The model has exploited transport equation with the quantum correction term included; this transport equation is a consequence of density matrix formalism and moment expansion of corresponding expressions. The achievements of this approach have been tested in the investigation of widely used semiconductor structures. The preliminary theoretical results have been compared with results available in the literature and previously formed knowledge related to this topic.
Keywords:
carriers' concentration / quantum well / quantum correctionSource:
Journal of Optoelectronics and Advanced Materials, 2006, 8, 4, 1418-1423Publisher:
- Natl Inst Optoelectronics, Bucharest-Magurele
Institution/Community
Tehnološko-metalurški fakultetTY - JOUR AU - Ramović, Rifat M. AU - Šašić, Rajko AU - Lukić, Petar M. PY - 2006 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/877 AB - In this paper modern approach to the investigation of carriers' concentration applicable to various semiconductor structures has been developed. The model has exploited transport equation with the quantum correction term included; this transport equation is a consequence of density matrix formalism and moment expansion of corresponding expressions. The achievements of this approach have been tested in the investigation of widely used semiconductor structures. The preliminary theoretical results have been compared with results available in the literature and previously formed knowledge related to this topic. PB - Natl Inst Optoelectronics, Bucharest-Magurele T2 - Journal of Optoelectronics and Advanced Materials T1 - Novel approach to the investigation of carriers' concentration in various semiconductor structures EP - 1423 IS - 4 SP - 1418 VL - 8 UR - https://hdl.handle.net/21.15107/rcub_technorep_877 ER -
@article{ author = "Ramović, Rifat M. and Šašić, Rajko and Lukić, Petar M.", year = "2006", abstract = "In this paper modern approach to the investigation of carriers' concentration applicable to various semiconductor structures has been developed. The model has exploited transport equation with the quantum correction term included; this transport equation is a consequence of density matrix formalism and moment expansion of corresponding expressions. The achievements of this approach have been tested in the investigation of widely used semiconductor structures. The preliminary theoretical results have been compared with results available in the literature and previously formed knowledge related to this topic.", publisher = "Natl Inst Optoelectronics, Bucharest-Magurele", journal = "Journal of Optoelectronics and Advanced Materials", title = "Novel approach to the investigation of carriers' concentration in various semiconductor structures", pages = "1423-1418", number = "4", volume = "8", url = "https://hdl.handle.net/21.15107/rcub_technorep_877" }
Ramović, R. M., Šašić, R.,& Lukić, P. M.. (2006). Novel approach to the investigation of carriers' concentration in various semiconductor structures. in Journal of Optoelectronics and Advanced Materials Natl Inst Optoelectronics, Bucharest-Magurele., 8(4), 1418-1423. https://hdl.handle.net/21.15107/rcub_technorep_877
Ramović RM, Šašić R, Lukić PM. Novel approach to the investigation of carriers' concentration in various semiconductor structures. in Journal of Optoelectronics and Advanced Materials. 2006;8(4):1418-1423. https://hdl.handle.net/21.15107/rcub_technorep_877 .
Ramović, Rifat M., Šašić, Rajko, Lukić, Petar M., "Novel approach to the investigation of carriers' concentration in various semiconductor structures" in Journal of Optoelectronics and Advanced Materials, 8, no. 4 (2006):1418-1423, https://hdl.handle.net/21.15107/rcub_technorep_877 .