In this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model, simulations were performed. Obtained results are in very good agreement with the already known ones.
Source:
2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 2006, 472-475
Publisher:
2006 25th International Conference on Microelectronics, MIEL 2006
TY - JOUR
AU - Lukić, Petar M.
AU - Ramović, Rifat M.
AU - Šašić, Rajko
PY - 2006
UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/886
AB - In this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model, simulations were performed. Obtained results are in very good agreement with the already known ones.
PB - 2006 25th International Conference on Microelectronics, MIEL 2006
T2 - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
T1 - A new threshold voltage analytical model of strained Si/SiGe MOSFET
EP - 475
SP - 472
DO - 10.1109/ICMEL.2006.1651004
ER -
@article{
author = "Lukić, Petar M. and Ramović, Rifat M. and Šašić, Rajko",
year = "2006",
abstract = "In this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model, simulations were performed. Obtained results are in very good agreement with the already known ones.",
publisher = "2006 25th International Conference on Microelectronics, MIEL 2006",
journal = "2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings",
title = "A new threshold voltage analytical model of strained Si/SiGe MOSFET",
pages = "475-472",
doi = "10.1109/ICMEL.2006.1651004"
}
Lukić, P. M., Ramović, R. M.,& Šašić, R.. (2006). A new threshold voltage analytical model of strained Si/SiGe MOSFET. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
2006 25th International Conference on Microelectronics, MIEL 2006., 472-475.
https://doi.org/10.1109/ICMEL.2006.1651004
Lukić PM, Ramović RM, Šašić R. A new threshold voltage analytical model of strained Si/SiGe MOSFET. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006;:472-475.
doi:10.1109/ICMEL.2006.1651004 .
Lukić, Petar M., Ramović, Rifat M., Šašić, Rajko, "A new threshold voltage analytical model of strained Si/SiGe MOSFET" in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (2006):472-475,
https://doi.org/10.1109/ICMEL.2006.1651004 . .
