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A new threshold voltage analytical model of strained Si/SiGe MOSFET
dc.creator | Lukić, Petar M. | |
dc.creator | Ramović, Rifat M. | |
dc.creator | Šašić, Rajko | |
dc.date.accessioned | 2021-03-10T10:32:32Z | |
dc.date.available | 2021-03-10T10:32:32Z | |
dc.date.issued | 2006 | |
dc.identifier.issn | 2159-1660 | |
dc.identifier.uri | http://TechnoRep.tmf.bg.ac.rs/handle/123456789/923 | |
dc.description.abstract | In this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model.. simulations were performed. Obtained results are in very good agreement with the already known ones. | en |
dc.publisher | IEEE, Electron Devices Soc & Reliability Group, New York | |
dc.rights | restrictedAccess | |
dc.source | 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings | |
dc.title | A new threshold voltage analytical model of strained Si/SiGe MOSFET | en |
dc.type | article | |
dc.rights.license | ARR | |
dc.citation.epage | + | |
dc.citation.other | : 505-+ | |
dc.citation.spage | 505 | |
dc.identifier.rcub | https://hdl.handle.net/21.15107/rcub_technorep_923 | |
dc.identifier.wos | 000238839700101 | |
dc.type.version | publishedVersion |
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