TY  - JOUR
AU  - Borca-Tasciuc, Theodorian
AU  - Liu, Weili
AU  - Liu, Jianlin
AU  - Zeng, Taofang Zeng
AU  - Song, David W
AU  - Moore, Caroline D.
AU  - Chen, Gang
AU  - Wang, Kang L.
AU  - Goorsky, Mark S.
AU  - Radetić, Tamara
AU  - Gronsky, Ronald
AU  - Koga, Takaaki
AU  - Dresselhaus, Mildred S.
PY  - 2000
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/7271
AB  - This paper reports temperature-dependent thermal conductivity measurements in the crossplane direction of symmetrically strained Si/Ge superlattices, and the effect of doping,
period thickness and dislocations on the thermal conductivity reduction of Si/Ge superlattices. The Si/Ge superlattices are grown by molecular beam epitaxy on silicon and siliconon-insulator substrates with a graded buffer layer. A differential 3ω method is used to measure the thermal conductivity of the buffer and the superlattices between 80 and 300 K.
The thermal conductivity measurement is carried out in conjunction with X-ray and TEM
sample characterization. The measured thermal conductivity values of the superlattices are
lower than those of their equivalent composition bulk alloys.
PB  - Academic Press Ltd.
T2  - Superlattices and microstructures
T1  - Thermal conductivity of symmetrically strained Si/Ge superlattices
EP  - 206
IS  - 3
SP  - 199
VL  - 28
DO  - 10.1006/spmi.2000.0900
ER  - 

@article{
author = "Borca-Tasciuc, Theodorian and Liu, Weili and Liu, Jianlin and Zeng, Taofang Zeng and Song, David W and Moore, Caroline D. and Chen, Gang and Wang, Kang L. and Goorsky, Mark S. and Radetić, Tamara and Gronsky, Ronald and Koga, Takaaki and Dresselhaus, Mildred S.",
year = "2000",
abstract = "This paper reports temperature-dependent thermal conductivity measurements in the crossplane direction of symmetrically strained Si/Ge superlattices, and the effect of doping,
period thickness and dislocations on the thermal conductivity reduction of Si/Ge superlattices. The Si/Ge superlattices are grown by molecular beam epitaxy on silicon and siliconon-insulator substrates with a graded buffer layer. A differential 3ω method is used to measure the thermal conductivity of the buffer and the superlattices between 80 and 300 K.
The thermal conductivity measurement is carried out in conjunction with X-ray and TEM
sample characterization. The measured thermal conductivity values of the superlattices are
lower than those of their equivalent composition bulk alloys.",
publisher = "Academic Press Ltd.",
journal = "Superlattices and microstructures",
title = "Thermal conductivity of symmetrically strained Si/Ge superlattices",
pages = "206-199",
number = "3",
volume = "28",
doi = "10.1006/spmi.2000.0900"
}

Borca-Tasciuc, T., Liu, W., Liu, J., Zeng, T. Z., Song, D. W., Moore, C. D., Chen, G., Wang, K. L., Goorsky, M. S., Radetić, T., Gronsky, R., Koga, T.,& Dresselhaus, M. S.. (2000). Thermal conductivity of symmetrically strained Si/Ge superlattices. in Superlattices and microstructures
Academic Press Ltd.., 28(3), 199-206.
https://doi.org/10.1006/spmi.2000.0900

Borca-Tasciuc T, Liu W, Liu J, Zeng TZ, Song DW, Moore CD, Chen G, Wang KL, Goorsky MS, Radetić T, Gronsky R, Koga T, Dresselhaus MS. Thermal conductivity of symmetrically strained Si/Ge superlattices. in Superlattices and microstructures. 2000;28(3):199-206.
doi:10.1006/spmi.2000.0900 .

Borca-Tasciuc, Theodorian, Liu, Weili, Liu, Jianlin, Zeng, Taofang Zeng, Song, David W, Moore, Caroline D., Chen, Gang, Wang, Kang L., Goorsky, Mark S., Radetić, Tamara, Gronsky, Ronald, Koga, Takaaki, Dresselhaus, Mildred S., "Thermal conductivity of symmetrically strained Si/Ge superlattices" in Superlattices and microstructures, 28, no. 3 (2000):199-206,
https://doi.org/10.1006/spmi.2000.0900 . .