Thermal conductivity of symmetrically strained Si/Ge superlattices
Само за регистроване кориснике
2000
Аутори
Borca-Tasciuc, TheodorianLiu, Weili
Liu, Jianlin
Zeng, Taofang Zeng
Song, David W
Moore, Caroline D.
Chen, Gang
Wang, Kang L.
Goorsky, Mark S.
Radetić, Tamara
Gronsky, Ronald
Koga, Takaaki
Dresselhaus, Mildred S.
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
This paper reports temperature-dependent thermal conductivity measurements in the crossplane direction of symmetrically strained Si/Ge superlattices, and the effect of doping,
period thickness and dislocations on the thermal conductivity reduction of Si/Ge superlattices. The Si/Ge superlattices are grown by molecular beam epitaxy on silicon and siliconon-insulator substrates with a graded buffer layer. A differential 3ω method is used to measure the thermal conductivity of the buffer and the superlattices between 80 and 300 K.
The thermal conductivity measurement is carried out in conjunction with X-ray and TEM
sample characterization. The measured thermal conductivity values of the superlattices are
lower than those of their equivalent composition bulk alloys.
Кључне речи:
thermal conductivity / superlattice / thermoelectrics phonon engineeringИзвор:
Superlattices and microstructures, 2000, 28, 3, 199-206Издавач:
- Academic Press Ltd.
Финансирање / пројекти:
- DOD MURI grant on thermoelectrics (N00014-97-1-0516)
Институција/група
Tehnološko-metalurški fakultetTY - JOUR AU - Borca-Tasciuc, Theodorian AU - Liu, Weili AU - Liu, Jianlin AU - Zeng, Taofang Zeng AU - Song, David W AU - Moore, Caroline D. AU - Chen, Gang AU - Wang, Kang L. AU - Goorsky, Mark S. AU - Radetić, Tamara AU - Gronsky, Ronald AU - Koga, Takaaki AU - Dresselhaus, Mildred S. PY - 2000 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/7271 AB - This paper reports temperature-dependent thermal conductivity measurements in the crossplane direction of symmetrically strained Si/Ge superlattices, and the effect of doping, period thickness and dislocations on the thermal conductivity reduction of Si/Ge superlattices. The Si/Ge superlattices are grown by molecular beam epitaxy on silicon and siliconon-insulator substrates with a graded buffer layer. A differential 3ω method is used to measure the thermal conductivity of the buffer and the superlattices between 80 and 300 K. The thermal conductivity measurement is carried out in conjunction with X-ray and TEM sample characterization. The measured thermal conductivity values of the superlattices are lower than those of their equivalent composition bulk alloys. PB - Academic Press Ltd. T2 - Superlattices and microstructures T1 - Thermal conductivity of symmetrically strained Si/Ge superlattices EP - 206 IS - 3 SP - 199 VL - 28 DO - 10.1006/spmi.2000.0900 ER -
@article{ author = "Borca-Tasciuc, Theodorian and Liu, Weili and Liu, Jianlin and Zeng, Taofang Zeng and Song, David W and Moore, Caroline D. and Chen, Gang and Wang, Kang L. and Goorsky, Mark S. and Radetić, Tamara and Gronsky, Ronald and Koga, Takaaki and Dresselhaus, Mildred S.", year = "2000", abstract = "This paper reports temperature-dependent thermal conductivity measurements in the crossplane direction of symmetrically strained Si/Ge superlattices, and the effect of doping, period thickness and dislocations on the thermal conductivity reduction of Si/Ge superlattices. The Si/Ge superlattices are grown by molecular beam epitaxy on silicon and siliconon-insulator substrates with a graded buffer layer. A differential 3ω method is used to measure the thermal conductivity of the buffer and the superlattices between 80 and 300 K. The thermal conductivity measurement is carried out in conjunction with X-ray and TEM sample characterization. The measured thermal conductivity values of the superlattices are lower than those of their equivalent composition bulk alloys.", publisher = "Academic Press Ltd.", journal = "Superlattices and microstructures", title = "Thermal conductivity of symmetrically strained Si/Ge superlattices", pages = "206-199", number = "3", volume = "28", doi = "10.1006/spmi.2000.0900" }
Borca-Tasciuc, T., Liu, W., Liu, J., Zeng, T. Z., Song, D. W., Moore, C. D., Chen, G., Wang, K. L., Goorsky, M. S., Radetić, T., Gronsky, R., Koga, T.,& Dresselhaus, M. S.. (2000). Thermal conductivity of symmetrically strained Si/Ge superlattices. in Superlattices and microstructures Academic Press Ltd.., 28(3), 199-206. https://doi.org/10.1006/spmi.2000.0900
Borca-Tasciuc T, Liu W, Liu J, Zeng TZ, Song DW, Moore CD, Chen G, Wang KL, Goorsky MS, Radetić T, Gronsky R, Koga T, Dresselhaus MS. Thermal conductivity of symmetrically strained Si/Ge superlattices. in Superlattices and microstructures. 2000;28(3):199-206. doi:10.1006/spmi.2000.0900 .
Borca-Tasciuc, Theodorian, Liu, Weili, Liu, Jianlin, Zeng, Taofang Zeng, Song, David W, Moore, Caroline D., Chen, Gang, Wang, Kang L., Goorsky, Mark S., Radetić, Tamara, Gronsky, Ronald, Koga, Takaaki, Dresselhaus, Mildred S., "Thermal conductivity of symmetrically strained Si/Ge superlattices" in Superlattices and microstructures, 28, no. 3 (2000):199-206, https://doi.org/10.1006/spmi.2000.0900 . .