Modeling and investigation of SiGe based MOSFET structure transport characteristics
Abstract
The focus of this paper was the investigation and modeling of transport characteristics in a strained SiGe based MOSFET structure, which might be of fundamental importance for the understanding of its operating characteristics. In the investigation, carrier mobility dependence on the lateral and vertical electric field is especially considered. Carrier mobility models for long channel as well as short channel SiGe MOSFETs are also presented. Average effective electric field model is proposed taking into account impact of high electric field effects on the effective channel length. In the final effective carrier mobility model, for the short channel SiGe MOSFETs, serial drain to source resistance is included. At the same time, proposed models are relatively simple. By using the presented model, simulations were performed.
Keywords:
SiGe MOSFET / transport characteristics modelSource:
Materials Science Forum, 2007, 555, 101-106Publisher:
- 8th Conference of the Yugoslav Materials Research Society
DOI: 10.4028/0-87849-441-3.101
ISSN: 0255-5476
PubMed:
WoS: 000249653700015
Scopus: 2-s2.0-38349065190
Institution/Community
Tehnološko-metalurški fakultetTY - JOUR AU - Lukić, Petar M. AU - Ramović, Rifat M. AU - Šašić, Rajko PY - 2007 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1008 AB - The focus of this paper was the investigation and modeling of transport characteristics in a strained SiGe based MOSFET structure, which might be of fundamental importance for the understanding of its operating characteristics. In the investigation, carrier mobility dependence on the lateral and vertical electric field is especially considered. Carrier mobility models for long channel as well as short channel SiGe MOSFETs are also presented. Average effective electric field model is proposed taking into account impact of high electric field effects on the effective channel length. In the final effective carrier mobility model, for the short channel SiGe MOSFETs, serial drain to source resistance is included. At the same time, proposed models are relatively simple. By using the presented model, simulations were performed. PB - 8th Conference of the Yugoslav Materials Research Society T2 - Materials Science Forum T1 - Modeling and investigation of SiGe based MOSFET structure transport characteristics EP - 106 SP - 101 VL - 555 DO - 10.4028/0-87849-441-3.101 ER -
@article{ author = "Lukić, Petar M. and Ramović, Rifat M. and Šašić, Rajko", year = "2007", abstract = "The focus of this paper was the investigation and modeling of transport characteristics in a strained SiGe based MOSFET structure, which might be of fundamental importance for the understanding of its operating characteristics. In the investigation, carrier mobility dependence on the lateral and vertical electric field is especially considered. Carrier mobility models for long channel as well as short channel SiGe MOSFETs are also presented. Average effective electric field model is proposed taking into account impact of high electric field effects on the effective channel length. In the final effective carrier mobility model, for the short channel SiGe MOSFETs, serial drain to source resistance is included. At the same time, proposed models are relatively simple. By using the presented model, simulations were performed.", publisher = "8th Conference of the Yugoslav Materials Research Society", journal = "Materials Science Forum", title = "Modeling and investigation of SiGe based MOSFET structure transport characteristics", pages = "106-101", volume = "555", doi = "10.4028/0-87849-441-3.101" }
Lukić, P. M., Ramović, R. M.,& Šašić, R.. (2007). Modeling and investigation of SiGe based MOSFET structure transport characteristics. in Materials Science Forum 8th Conference of the Yugoslav Materials Research Society., 555, 101-106. https://doi.org/10.4028/0-87849-441-3.101
Lukić PM, Ramović RM, Šašić R. Modeling and investigation of SiGe based MOSFET structure transport characteristics. in Materials Science Forum. 2007;555:101-106. doi:10.4028/0-87849-441-3.101 .
Lukić, Petar M., Ramović, Rifat M., Šašić, Rajko, "Modeling and investigation of SiGe based MOSFET structure transport characteristics" in Materials Science Forum, 555 (2007):101-106, https://doi.org/10.4028/0-87849-441-3.101 . .