Analytical model of MIS structure in electron devices
Analitički model MIS strukture u elektronskim napravama
Апстракт
In this paper the new analytical model of MIS (Metal-Insulator -Semiconductor) structure, in microelectron devices, is proposed. Presented model is relatively simple and, at the same time, the results obtained by the proposed model are in good agreement with already known ones. Developed model is modular, thus it can easily be analyzed, tested and eventually changed. Special model for carriers mobility is also proposed. The mobility dependence on temperature is also included in the proposed mobility model and therefore, temperature influence on MIS behavior. On the bases of the model that is presented, algorithm was made and simulations of electrical field potential distribution and carriers concentration in semiconductor layer of MIS structure, under influence of DC voltage, were performed. Obtained results are analyzed and presented in graphical form.
Metal-izolator-poluprovodnik struktura (MIS -Metal-Insulator-Semiconductor struktura) je sastavni deo najvećeg broja savremenih elektronskih komponenti i naprava. Otuda istraživanje i analiziranje fizičkih procesa koji se odvijaju u pomenutoj strukturi ima fundamentalan značaj. U ovom radu razvijen je analitički model električnog polja, potencijala i koncentracije slobodnih nosilaca naelektrisanja u poluprovodničkom sloju (podlozi) MIS strukture. Pretpostavljeno je da su slojevi metala i izolatora veoma tanki, što odgovara standardima koji se koriste prilikom izrade savremenih elektronskih naprava. Na osnovu predloženog modela, izvršene su simulacije raspodele električnih karakteristika koje nastaju pod uticajem jednosmernog napona na metalnom sloju. Dobijeni rezultati su prikazani grafički i analizirani.
Кључне речи:
modeling / MIS structure / modelovanje / MIS strukturaИзвор:
Tehnika - Novi materijali, 2010, 19, 1, 15-19Издавач:
- Savez inženjera i tehničara Srbije, Beograd
Институција/група
Tehnološko-metalurški fakultetTY - JOUR AU - Lukić, Vladan M. AU - Lukić, Petar M. AU - Šašić, Rajko PY - 2010 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1608 AB - In this paper the new analytical model of MIS (Metal-Insulator -Semiconductor) structure, in microelectron devices, is proposed. Presented model is relatively simple and, at the same time, the results obtained by the proposed model are in good agreement with already known ones. Developed model is modular, thus it can easily be analyzed, tested and eventually changed. Special model for carriers mobility is also proposed. The mobility dependence on temperature is also included in the proposed mobility model and therefore, temperature influence on MIS behavior. On the bases of the model that is presented, algorithm was made and simulations of electrical field potential distribution and carriers concentration in semiconductor layer of MIS structure, under influence of DC voltage, were performed. Obtained results are analyzed and presented in graphical form. AB - Metal-izolator-poluprovodnik struktura (MIS -Metal-Insulator-Semiconductor struktura) je sastavni deo najvećeg broja savremenih elektronskih komponenti i naprava. Otuda istraživanje i analiziranje fizičkih procesa koji se odvijaju u pomenutoj strukturi ima fundamentalan značaj. U ovom radu razvijen je analitički model električnog polja, potencijala i koncentracije slobodnih nosilaca naelektrisanja u poluprovodničkom sloju (podlozi) MIS strukture. Pretpostavljeno je da su slojevi metala i izolatora veoma tanki, što odgovara standardima koji se koriste prilikom izrade savremenih elektronskih naprava. Na osnovu predloženog modela, izvršene su simulacije raspodele električnih karakteristika koje nastaju pod uticajem jednosmernog napona na metalnom sloju. Dobijeni rezultati su prikazani grafički i analizirani. PB - Savez inženjera i tehničara Srbije, Beograd T2 - Tehnika - Novi materijali T1 - Analytical model of MIS structure in electron devices T1 - Analitički model MIS strukture u elektronskim napravama EP - 19 IS - 1 SP - 15 VL - 19 UR - https://hdl.handle.net/21.15107/rcub_technorep_1608 ER -
@article{ author = "Lukić, Vladan M. and Lukić, Petar M. and Šašić, Rajko", year = "2010", abstract = "In this paper the new analytical model of MIS (Metal-Insulator -Semiconductor) structure, in microelectron devices, is proposed. Presented model is relatively simple and, at the same time, the results obtained by the proposed model are in good agreement with already known ones. Developed model is modular, thus it can easily be analyzed, tested and eventually changed. Special model for carriers mobility is also proposed. The mobility dependence on temperature is also included in the proposed mobility model and therefore, temperature influence on MIS behavior. On the bases of the model that is presented, algorithm was made and simulations of electrical field potential distribution and carriers concentration in semiconductor layer of MIS structure, under influence of DC voltage, were performed. Obtained results are analyzed and presented in graphical form., Metal-izolator-poluprovodnik struktura (MIS -Metal-Insulator-Semiconductor struktura) je sastavni deo najvećeg broja savremenih elektronskih komponenti i naprava. Otuda istraživanje i analiziranje fizičkih procesa koji se odvijaju u pomenutoj strukturi ima fundamentalan značaj. U ovom radu razvijen je analitički model električnog polja, potencijala i koncentracije slobodnih nosilaca naelektrisanja u poluprovodničkom sloju (podlozi) MIS strukture. Pretpostavljeno je da su slojevi metala i izolatora veoma tanki, što odgovara standardima koji se koriste prilikom izrade savremenih elektronskih naprava. Na osnovu predloženog modela, izvršene su simulacije raspodele električnih karakteristika koje nastaju pod uticajem jednosmernog napona na metalnom sloju. Dobijeni rezultati su prikazani grafički i analizirani.", publisher = "Savez inženjera i tehničara Srbije, Beograd", journal = "Tehnika - Novi materijali", title = "Analytical model of MIS structure in electron devices, Analitički model MIS strukture u elektronskim napravama", pages = "19-15", number = "1", volume = "19", url = "https://hdl.handle.net/21.15107/rcub_technorep_1608" }
Lukić, V. M., Lukić, P. M.,& Šašić, R.. (2010). Analytical model of MIS structure in electron devices. in Tehnika - Novi materijali Savez inženjera i tehničara Srbije, Beograd., 19(1), 15-19. https://hdl.handle.net/21.15107/rcub_technorep_1608
Lukić VM, Lukić PM, Šašić R. Analytical model of MIS structure in electron devices. in Tehnika - Novi materijali. 2010;19(1):15-19. https://hdl.handle.net/21.15107/rcub_technorep_1608 .
Lukić, Vladan M., Lukić, Petar M., Šašić, Rajko, "Analytical model of MIS structure in electron devices" in Tehnika - Novi materijali, 19, no. 1 (2010):15-19, https://hdl.handle.net/21.15107/rcub_technorep_1608 .