4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance
Abstract
4H-SiC VDMOS is a peculiar semiconductor structure with two considerably different recognized regions. One of them is a vertical drift region, whereas the other one appears as a horizontal channel with its left and right sections corresponding to source bias. In each of these regions current-voltage characterisic can become saturated regardless of the status of the other region, thus making possible several operation modes of the considered devices. The investigation of the onset of these saturations in their order of appearance is the goal of this paper.
Keywords:
4H-SiC VDMOS / Drift-region saturation / Channel saturationSource:
Optoelectronics and Advanced Materials-Rapid Communications, 2013, 7, 5-6, 329-333Publisher:
- Natl Inst Optoelectronics, Bucharest-Magurele
Funding / projects:
- Optoelectronics nanodimension systems - the rout towards applications (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-45003)
Institution/Community
Tehnološko-metalurški fakultetTY - JOUR AU - Abood, Imhammad AU - Lukić, Petar M. AU - Šašić, Rajko AU - Alkoash, Abed Alkhem AU - Ostojić, Stanko M. PY - 2013 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2417 AB - 4H-SiC VDMOS is a peculiar semiconductor structure with two considerably different recognized regions. One of them is a vertical drift region, whereas the other one appears as a horizontal channel with its left and right sections corresponding to source bias. In each of these regions current-voltage characterisic can become saturated regardless of the status of the other region, thus making possible several operation modes of the considered devices. The investigation of the onset of these saturations in their order of appearance is the goal of this paper. PB - Natl Inst Optoelectronics, Bucharest-Magurele T2 - Optoelectronics and Advanced Materials-Rapid Communications T1 - 4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance EP - 333 IS - 5-6 SP - 329 VL - 7 UR - https://hdl.handle.net/21.15107/rcub_technorep_2417 ER -
@article{ author = "Abood, Imhammad and Lukić, Petar M. and Šašić, Rajko and Alkoash, Abed Alkhem and Ostojić, Stanko M.", year = "2013", abstract = "4H-SiC VDMOS is a peculiar semiconductor structure with two considerably different recognized regions. One of them is a vertical drift region, whereas the other one appears as a horizontal channel with its left and right sections corresponding to source bias. In each of these regions current-voltage characterisic can become saturated regardless of the status of the other region, thus making possible several operation modes of the considered devices. The investigation of the onset of these saturations in their order of appearance is the goal of this paper.", publisher = "Natl Inst Optoelectronics, Bucharest-Magurele", journal = "Optoelectronics and Advanced Materials-Rapid Communications", title = "4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance", pages = "333-329", number = "5-6", volume = "7", url = "https://hdl.handle.net/21.15107/rcub_technorep_2417" }
Abood, I., Lukić, P. M., Šašić, R., Alkoash, A. A.,& Ostojić, S. M.. (2013). 4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance. in Optoelectronics and Advanced Materials-Rapid Communications Natl Inst Optoelectronics, Bucharest-Magurele., 7(5-6), 329-333. https://hdl.handle.net/21.15107/rcub_technorep_2417
Abood I, Lukić PM, Šašić R, Alkoash AA, Ostojić SM. 4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance. in Optoelectronics and Advanced Materials-Rapid Communications. 2013;7(5-6):329-333. https://hdl.handle.net/21.15107/rcub_technorep_2417 .
Abood, Imhammad, Lukić, Petar M., Šašić, Rajko, Alkoash, Abed Alkhem, Ostojić, Stanko M., "4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance" in Optoelectronics and Advanced Materials-Rapid Communications, 7, no. 5-6 (2013):329-333, https://hdl.handle.net/21.15107/rcub_technorep_2417 .