Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies
Апстракт
In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.
Кључне речи:
non-volatile memory / radiation effect / resistive RAM / ferroelectric RAM / magneto-resistive RAM / phase change memoryИзвор:
Nuclear technology and radiation protection, 2017, 32, 4, 381-392Издавач:
- Vinca Inst Nuclear Sci
Финансирање / пројекти:
- Физички и функционални ефекти интеракције зрачења са електротехничким и биолошким системима (RS-MESTD-Basic Research (BR or ON)-171007)
DOI: 10.2298/NTRP1704381F
ISSN: 1451-3994
WoS: 000423779500011
Scopus: 2-s2.0-85041121133
Институција/група
Tehnološko-metalurški fakultetTY - JOUR AU - Fetahović, Irfan S. AU - Dolićanin, Edin Ć. AU - Lazarević, Đorđe R. AU - Lončar, Boris B. PY - 2017 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/5850 AB - In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments. PB - Vinca Inst Nuclear Sci T2 - Nuclear technology and radiation protection T1 - Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies EP - 392 IS - 4 SP - 381 VL - 32 DO - 10.2298/NTRP1704381F ER -
@article{ author = "Fetahović, Irfan S. and Dolićanin, Edin Ć. and Lazarević, Đorđe R. and Lončar, Boris B.", year = "2017", abstract = "In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.", publisher = "Vinca Inst Nuclear Sci", journal = "Nuclear technology and radiation protection", title = "Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies", pages = "392-381", number = "4", volume = "32", doi = "10.2298/NTRP1704381F" }
Fetahović, I. S., Dolićanin, E. Ć., Lazarević, Đ. R.,& Lončar, B. B.. (2017). Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies. in Nuclear technology and radiation protection Vinca Inst Nuclear Sci., 32(4), 381-392. https://doi.org/10.2298/NTRP1704381F
Fetahović IS, Dolićanin EĆ, Lazarević ĐR, Lončar BB. Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies. in Nuclear technology and radiation protection. 2017;32(4):381-392. doi:10.2298/NTRP1704381F .
Fetahović, Irfan S., Dolićanin, Edin Ć., Lazarević, Đorđe R., Lončar, Boris B., "Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies" in Nuclear technology and radiation protection, 32, no. 4 (2017):381-392, https://doi.org/10.2298/NTRP1704381F . .