Raman scattering from a self-organized Ge dot superlattice
Само за регистроване кориснике
1999
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
We present a Raman scattering study of a self-organized Ge dot superlattice. The structure, which consists of 20 periods of Ge quantum dots sandwiched by 6 nm Si spacers, is grown on a Si (100) substrate by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy is used to characterize the structural properties of these Ge dots. Raman spectrum shows a downward shift of the Ge–Ge mode, which is attributed to the phonon confinement in the Ge dots. From polarization dependent Raman spectra, strong inter-sub-level transition in the Ge quantum dots is observed. From a simple calculation, the observed peak at 1890
in the polarized spectrum is attributed to the transition between the first two heavy hole states of the Ge quantum dots.
Извор:
Applied Physics Letters, 1999, 74, 13, 1863-1865Издавач:
- American Institute of Physics Inc.
Финансирање / пројекти:
- National Science Foundation (DMR-9520893)
- ARO (DAAG55-98-1-0358)
- Low Power MURI (DAAH049610005)
Институција/група
Tehnološko-metalurški fakultetTY - JOUR AU - Liu, Jianlin L. AU - Tang, Yinsheng S. AU - Wang, Kang L. AU - Radetić, Tamara AU - Gronsky, Ronald PY - 1999 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/7273 AB - We present a Raman scattering study of a self-organized Ge dot superlattice. The structure, which consists of 20 periods of Ge quantum dots sandwiched by 6 nm Si spacers, is grown on a Si (100) substrate by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy is used to characterize the structural properties of these Ge dots. Raman spectrum shows a downward shift of the Ge–Ge mode, which is attributed to the phonon confinement in the Ge dots. From polarization dependent Raman spectra, strong inter-sub-level transition in the Ge quantum dots is observed. From a simple calculation, the observed peak at 1890 in the polarized spectrum is attributed to the transition between the first two heavy hole states of the Ge quantum dots. PB - American Institute of Physics Inc. T2 - Applied Physics Letters T1 - Raman scattering from a self-organized Ge dot superlattice EP - 1865 IS - 13 SP - 1863 VL - 74 DO - 10.1063/1.123694 ER -
@article{ author = "Liu, Jianlin L. and Tang, Yinsheng S. and Wang, Kang L. and Radetić, Tamara and Gronsky, Ronald", year = "1999", abstract = "We present a Raman scattering study of a self-organized Ge dot superlattice. The structure, which consists of 20 periods of Ge quantum dots sandwiched by 6 nm Si spacers, is grown on a Si (100) substrate by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy is used to characterize the structural properties of these Ge dots. Raman spectrum shows a downward shift of the Ge–Ge mode, which is attributed to the phonon confinement in the Ge dots. From polarization dependent Raman spectra, strong inter-sub-level transition in the Ge quantum dots is observed. From a simple calculation, the observed peak at 1890 in the polarized spectrum is attributed to the transition between the first two heavy hole states of the Ge quantum dots.", publisher = "American Institute of Physics Inc.", journal = "Applied Physics Letters", title = "Raman scattering from a self-organized Ge dot superlattice", pages = "1865-1863", number = "13", volume = "74", doi = "10.1063/1.123694" }
Liu, J. L., Tang, Y. S., Wang, K. L., Radetić, T.,& Gronsky, R.. (1999). Raman scattering from a self-organized Ge dot superlattice. in Applied Physics Letters American Institute of Physics Inc.., 74(13), 1863-1865. https://doi.org/10.1063/1.123694
Liu JL, Tang YS, Wang KL, Radetić T, Gronsky R. Raman scattering from a self-organized Ge dot superlattice. in Applied Physics Letters. 1999;74(13):1863-1865. doi:10.1063/1.123694 .
Liu, Jianlin L., Tang, Yinsheng S., Wang, Kang L., Radetić, Tamara, Gronsky, Ronald, "Raman scattering from a self-organized Ge dot superlattice" in Applied Physics Letters, 74, no. 13 (1999):1863-1865, https://doi.org/10.1063/1.123694 . .