Raman scattering and infrared absorption in multiple boron-doped Ge dots
Само за регистроване кориснике
1999
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
Multiple boron-doped Ge quantum dots are investigated. The structure, which consists of 20 periods of Ge quantum dots stacked with 6 nm Si spacers, is grown on a Si (100) substrate by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy are used to characterize the structural properties of these Ge dots. Raman spectrum shows a downward shift of the Ge–Ge mode, which is attributed to the phonon confinement in the Ge dots. From polarization dependent Raman spectra, the strong inter-sub-level transition in the Ge quantum dots is observed. The transition is further confirmed by Fourier transform infrared spectroscopy using a waveguide geometry. The observed peak at 5 μm in the infrared absorption spectrum is consistent with that in the Raman spectrum and attributed to the transition between the first two heavy hole band states of the Ge quantum dots. The polarization dependence measurement is used to study the nature of the trans...itions. This study suggests the possible use of Ge quantum dots for infrared detector application.
Извор:
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1999, 17, 4, 1420-1424Издавач:
- American Institute of Physics Inc.
- American Vacuum Society
Финансирање / пројекти:
- National Science Foundation (DMR-9520893)
- ARO (DAAG55-98-1-0358)
- Low Power MURI (DAAH049610005)
Институција/група
Tehnološko-metalurški fakultetTY - JOUR AU - Liu, Jianlin L. AU - Wu, Wen G. AU - Tang, Yinsheng S. AU - Wang, Kang L. AU - Radetić, Tamara AU - Gronsky, Ronald PY - 1999 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/7276 AB - Multiple boron-doped Ge quantum dots are investigated. The structure, which consists of 20 periods of Ge quantum dots stacked with 6 nm Si spacers, is grown on a Si (100) substrate by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy are used to characterize the structural properties of these Ge dots. Raman spectrum shows a downward shift of the Ge–Ge mode, which is attributed to the phonon confinement in the Ge dots. From polarization dependent Raman spectra, the strong inter-sub-level transition in the Ge quantum dots is observed. The transition is further confirmed by Fourier transform infrared spectroscopy using a waveguide geometry. The observed peak at 5 μm in the infrared absorption spectrum is consistent with that in the Raman spectrum and attributed to the transition between the first two heavy hole band states of the Ge quantum dots. The polarization dependence measurement is used to study the nature of the transitions. This study suggests the possible use of Ge quantum dots for infrared detector application. PB - American Institute of Physics Inc. PB - American Vacuum Society T2 - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films T1 - Raman scattering and infrared absorption in multiple boron-doped Ge dots EP - 1424 IS - 4 SP - 1420 VL - 17 DO - 10.1116/1.581830 ER -
@article{ author = "Liu, Jianlin L. and Wu, Wen G. and Tang, Yinsheng S. and Wang, Kang L. and Radetić, Tamara and Gronsky, Ronald", year = "1999", abstract = "Multiple boron-doped Ge quantum dots are investigated. The structure, which consists of 20 periods of Ge quantum dots stacked with 6 nm Si spacers, is grown on a Si (100) substrate by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy are used to characterize the structural properties of these Ge dots. Raman spectrum shows a downward shift of the Ge–Ge mode, which is attributed to the phonon confinement in the Ge dots. From polarization dependent Raman spectra, the strong inter-sub-level transition in the Ge quantum dots is observed. The transition is further confirmed by Fourier transform infrared spectroscopy using a waveguide geometry. The observed peak at 5 μm in the infrared absorption spectrum is consistent with that in the Raman spectrum and attributed to the transition between the first two heavy hole band states of the Ge quantum dots. The polarization dependence measurement is used to study the nature of the transitions. This study suggests the possible use of Ge quantum dots for infrared detector application.", publisher = "American Institute of Physics Inc., American Vacuum Society", journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films", title = "Raman scattering and infrared absorption in multiple boron-doped Ge dots", pages = "1424-1420", number = "4", volume = "17", doi = "10.1116/1.581830" }
Liu, J. L., Wu, W. G., Tang, Y. S., Wang, K. L., Radetić, T.,& Gronsky, R.. (1999). Raman scattering and infrared absorption in multiple boron-doped Ge dots. in Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films American Institute of Physics Inc.., 17(4), 1420-1424. https://doi.org/10.1116/1.581830
Liu JL, Wu WG, Tang YS, Wang KL, Radetić T, Gronsky R. Raman scattering and infrared absorption in multiple boron-doped Ge dots. in Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1999;17(4):1420-1424. doi:10.1116/1.581830 .
Liu, Jianlin L., Wu, Wen G., Tang, Yinsheng S., Wang, Kang L., Radetić, Tamara, Gronsky, Ronald, "Raman scattering and infrared absorption in multiple boron-doped Ge dots" in Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 17, no. 4 (1999):1420-1424, https://doi.org/10.1116/1.581830 . .