New analytical HFET I-V characteristics model
Само за регистроване кориснике
2006
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In this paper the new analytical model of current - voltage characteristics of a Heterostructure Field Effect Transistor (HFET), is proposed. The model is relatively simple, and at the same time, it describes complex HFET physics. In the new model, most of the parameters have a clear, physical meaning. Presented model includes HFET carrier mobility model, as well as HFET electric field model. Temperature influence is included in the model too. This model is suitable for the design and simulation of different types of HFETs. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained results, available in literature.
Кључне речи:
I-Vcharacteristics model / Heterostructure Field Effect Transistor (HFET)Извор:
Journal of Optoelectronics and Advanced Materials, 2006, 8, 1, 324-328Издавач:
- Natl Inst Optoelectronics, Bucharest-Magurele
Институција/група
Tehnološko-metalurški fakultetTY - JOUR AU - Šašić, Rajko AU - Lukić, Petar M. AU - Ramović, Rifat M. PY - 2006 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/882 AB - In this paper the new analytical model of current - voltage characteristics of a Heterostructure Field Effect Transistor (HFET), is proposed. The model is relatively simple, and at the same time, it describes complex HFET physics. In the new model, most of the parameters have a clear, physical meaning. Presented model includes HFET carrier mobility model, as well as HFET electric field model. Temperature influence is included in the model too. This model is suitable for the design and simulation of different types of HFETs. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained results, available in literature. PB - Natl Inst Optoelectronics, Bucharest-Magurele T2 - Journal of Optoelectronics and Advanced Materials T1 - New analytical HFET I-V characteristics model EP - 328 IS - 1 SP - 324 VL - 8 UR - https://hdl.handle.net/21.15107/rcub_technorep_882 ER -
@article{ author = "Šašić, Rajko and Lukić, Petar M. and Ramović, Rifat M.", year = "2006", abstract = "In this paper the new analytical model of current - voltage characteristics of a Heterostructure Field Effect Transistor (HFET), is proposed. The model is relatively simple, and at the same time, it describes complex HFET physics. In the new model, most of the parameters have a clear, physical meaning. Presented model includes HFET carrier mobility model, as well as HFET electric field model. Temperature influence is included in the model too. This model is suitable for the design and simulation of different types of HFETs. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained results, available in literature.", publisher = "Natl Inst Optoelectronics, Bucharest-Magurele", journal = "Journal of Optoelectronics and Advanced Materials", title = "New analytical HFET I-V characteristics model", pages = "328-324", number = "1", volume = "8", url = "https://hdl.handle.net/21.15107/rcub_technorep_882" }
Šašić, R., Lukić, P. M.,& Ramović, R. M.. (2006). New analytical HFET I-V characteristics model. in Journal of Optoelectronics and Advanced Materials Natl Inst Optoelectronics, Bucharest-Magurele., 8(1), 324-328. https://hdl.handle.net/21.15107/rcub_technorep_882
Šašić R, Lukić PM, Ramović RM. New analytical HFET I-V characteristics model. in Journal of Optoelectronics and Advanced Materials. 2006;8(1):324-328. https://hdl.handle.net/21.15107/rcub_technorep_882 .
Šašić, Rajko, Lukić, Petar M., Ramović, Rifat M., "New analytical HFET I-V characteristics model" in Journal of Optoelectronics and Advanced Materials, 8, no. 1 (2006):324-328, https://hdl.handle.net/21.15107/rcub_technorep_882 .