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Surface carriers' concentration dynamics caused by a small alternating applied voltage
(Natl Inst Optoelectronics, Bucharest-Magurele, 2008)
One of our previous papers was devoted to threshold voltage in MOSFETs and MODFETs viewed as a problem of nonlinear dynamics. The behavior of surface carriers' concentration under D.C. (direct current) applied voltage has ...
TIMS and MALDI TOF of endohedral Li-n"C-70 (n=1-3) metallofullerenes
(Natl Inst Optoelectronics, Bucharest-Magurele, 2008)
Using the ion implantation technique (introducing negatively charged fullerene into a low temperature lithium plasma column by a strong axial magnetic field) endohedral fullerenes Li"C-70, Li-2"C-70 and Li-3"C-70 were ...
Modeling of carriers mobility impact on CNT FIET current-voltage characteristics
(Natl Inst Optoelectronics, Bucharest-Magurele, 2014)
In this paper, field effect transistor with active area made of carbon nano tubes (CNT FET), is investigated. At the beginning, CNT characteristics, structure and possibilities of their implementation as a FET channel, are ...
Fluorescence, thermal and mechanical properties of PMMA-CdSe QD film
(Natl Inst Optoelectronics, Bucharest-Magurele, 2017)
In the present paper an effort has been made to investigate processing and characterization of composite poly (methyl methacrylate)-cadmium selenide (PMMA-CdSe). Thin films of pure PMMA and composites with 0.06 % wt. CdSe ...
Electrodeposited hydroxyapatite thin films modified by ion beam irradiation
(Natl Inst Optoelectronics, Bucharest-Magurele, 2009)
Surface modification of hydroxyapatite (HA) thin films electrodeposited on titanium was conducted by ion implantation, using nitrogen and argon ions at different constant fluences of 1x10(15), 1x10(16) and 1x10(17) ions/cm(2). ...
The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs
(Natl Inst Optoelectronics, Bucharest-Magurele, 2010)
The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of ...
Thermal stability of cordierite/silicon carbide composites after cyclic thermal shock
(Natl Inst Optoelectronics, Bucharest-Magurele, 2008)
In this paper composite material made from silicium carbide and cordierite was used in experiments. Behavior of the material in conditions of rapid temperature changes was investigated. Modified water quench test was applied ...
Analytical model of CNT FET current-voltage characteristics
(Natl Inst Optoelectronics, Bucharest-Magurele, 2012)
In this paper, one of the most promising electron devices - carbon nanotube field effect transistor (CNT FET) is investigated. At the beginning, the carbon nanotube properties are presented. The main contribution of this ...
Polymer composite films and nanofibers doped with core-shell quantum dots
(Natl Inst Optoelectronics, Bucharest-Magurele, 2020)
Processing and characterization of polymer nanocomposites based on poly(methyl methacrylate) (PMMA) matrix with embedded core-shell CdSe/ZnS quantum dots were investigated. Nanocomposites were obtained via solution casting ...