Digitally graded GaAs/Al0.44Ga0.56As quantum-cascade laser
dc.creator | Indjin, Dragan | |
dc.creator | Tomić, Stanko | |
dc.creator | Ikonić, Zoran | |
dc.creator | Harrison, Paul | |
dc.creator | Kelsall, Robert W. | |
dc.creator | Milanović, Vitomir | |
dc.creator | Kočinac, Saša | |
dc.date.accessioned | 2021-03-10T10:06:14Z | |
dc.date.available | 2021-03-10T10:06:14Z | |
dc.date.issued | 2003 | |
dc.identifier.issn | 1386-9477 | |
dc.identifier.uri | http://TechnoRep.tmf.bg.ac.rs/handle/123456789/520 | |
dc.description.abstract | A method for the optimal design and realization of a GaAs/Al0.44Ga0.56As quantum-cascade laser (QCL) is presented. Firstly, an optimal, smooth active region profile is derived, using inverse spectral theory. A digitally graded laser structure is then designed, having an approximately equivalent potential profile.. The gain and threshold current of the optimized device are calculated using a 15-level self-consistent rate equation model, and are shown to represent substantial improvements over the figures obtained, using the same calculation method, for the recently reported room temperature GaAs/Al0.44Ga0.56As QCL of Page et al. (Appl. Phys. Lett. 78 (2001) 3529). | en |
dc.publisher | Elsevier, Amsterdam | |
dc.rights | restrictedAccess | |
dc.source | Physica E-Low-Dimensional Systems & Nanostructures | |
dc.subject | quantum-cascade laser | en |
dc.subject | gain optimization | en |
dc.title | Digitally graded GaAs/Al0.44Ga0.56As quantum-cascade laser | en |
dc.type | article | |
dc.rights.license | ARR | |
dc.citation.epage | 622 | |
dc.citation.issue | 1-4 | |
dc.citation.other | 17(1-4): 620-622 | |
dc.citation.rank | M22 | |
dc.citation.spage | 620 | |
dc.citation.volume | 17 | |
dc.identifier.doi | 10.1016/S1386-9477(02)00901-3 | |
dc.identifier.scopus | 2-s2.0-0344950290 | |
dc.identifier.wos | 000182700700208 | |
dc.type.version | publishedVersion |